Strain-controlled boron and nitrogen doping of amorphous carbon layers for hard mask applications

Tae Wan Kim, Dongbin Kim, Yong Sung Kim, Sang Hyun Park, Sung Kyu Lim, Keun Oh Park, Taesung Kim, Sang Woo Kang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Nitrogen- and boron-doped amorphous carbon layers (ACLs) were grown by plasma- enhanced chemical vapor deposition (PECVD) on a Si substrate and characterized by Raman and X-ray photoelectron spectroscopy (XPS) techniques. Increasing doping levels resulted in a shift in the Raman G-peak of the doped ALCs, indicating a change in bond lengths upon doping. The XPS N1s and B1s spectra revealed the presence of different types of N-related (involving pyridinic, pyrrolinic, and graphitic N) and B-related (corresponding to BC2O and [Formula presented] species) bonds in the N- and B-doped ACLs, with N and B doping levels ranging from 2.03 to 3.94 at.% and from 1.44 to 10.4 at.%, respectively. These results suggest that the dry etch resistance of the present ACLs was enhanced by B doping and negatively affected by N doping. Density functional theory calculations highlighted the strengthening of [Formula presented] bonds induced by B doping and their corresponding weakening caused by N doping as possible explanations for the effects of doping on the dry etching characteristics of the ACLs.

Original languageEnglish
Pages (from-to)102-107
Number of pages6
JournalDiamond and Related Materials
StatePublished - 1 Oct 2016


  • Ammonia
  • Amorphous carbon layer
  • Diborane
  • Dopant
  • Strain-control


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