Abstract
Theoretical study on the effects of the biaxial compressive strain on the optical gain of the strained-layer CdxZn1-xSe-ZnSySe1-y quantum-well blue-green laser is presented for the first time with the band mixing effects taken into account. Calculated gain of a CdxZn1-xSe-ZnSySe1-y quantum well shows a remarkable enhancement with increasing biaxial compressive strain (in abosulte value) of a quantum well. In particular, the linear gain becomes one third of that of a GaAs-AlGaAs quantum well with a same well width when the biaxial compressive strain is ζ=-45 meV, allowing the CdZnSe quantum well laser favorable for room-temperature operation.
| Original language | English |
|---|---|
| Pages (from-to) | L556-L559 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 31 |
| Issue number | 5 |
| DOIs | |
| State | Published - May 1992 |
Keywords
- Band mixing
- Biaixal compressive strain
- Blue-green laser
- II-VI quantum well
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