Structural analysis of the reconstructed Si(001)-C surface

J. Y. Park, J. H. Seo, C. N. Whang, S. S. Kim, D. S. Choi, K. H. Chae

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2 Scopus citations


The atomic structure of reconstructed Si (001) c (4×4) -C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2 H4) molecules have been exposed on Si (001) - (2×1) surface at 700 °C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.

Original languageEnglish
Article number204705
JournalJournal of Chemical Physics
Issue number20
StatePublished - 22 May 2005


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