Structural analysis of the reconstructed Si(001)-C surface

J. Y. Park; J. H. Seo; C. N. Whang; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1063/1.1908452

Structural analysis of the reconstructed Si(001)-C surface

J. Y. Park, J. H. Seo, C. N. Whang, S. S. Kim, D. S. Choi, K. H. Chae

Department of Physics

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2 Scopus citations

Abstract

The atomic structure of reconstructed Si (001) c (4×4) -C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2 H4) molecules have been exposed on Si (001) - (2×1) surface at 700 °C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.

Original language	English
Article number	204705
Journal	Journal of Chemical Physics
Volume	122
Issue number	20
DOIs	https://doi.org/10.1063/1.1908452
State	Published - 22 May 2005

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title = "Structural analysis of the reconstructed Si(001)-C surface",

abstract = "The atomic structure of reconstructed Si (001) c (4×4) -C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2 H4) molecules have been exposed on Si (001) - (2×1) surface at 700 °C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.",

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AU - Park, J. Y.

AU - Seo, J. H.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2005/5/22

Y1 - 2005/5/22

N2 - The atomic structure of reconstructed Si (001) c (4×4) -C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2 H4) molecules have been exposed on Si (001) - (2×1) surface at 700 °C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.

AB - The atomic structure of reconstructed Si (001) c (4×4) -C surface has been studied by coaxial impact collision ion scattering spectroscopy. When the 100L of ethylene (C2 H4) molecules have been exposed on Si (001) - (2×1) surface at 700 °C, it is found that C atoms cause the ordering of missing Si dimer defects and occupy the fourth layer of Si(001) directly below the bridge site. Our results provide the support for the previous model in which a missing dimer structure is accompanied by C incorporation into the subsurface.

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VL - 122

JO - Journal of Chemical Physics

JF - Journal of Chemical Physics

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Structural analysis of the reconstructed Si(001)-C surface

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