Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)4Ti3O 12/SrTa2O6/Si structures

Ho Seung Jeon; Jeong Hwan Kim; Joo Nam Kim; Kwang Hun Park; Byung Eun Park

doi:10.1109/ISAF.2007.4393169

Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)₄Ti₃O ₁₂/SrTa₂O₆/Si structures

Ho Seung Jeon, Jeong Hwan Kim, Joo Nam Kim, Kwang Hun Park, Byung Eun Park

School of Electrical and Computer Engineering

University of Seoul

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)₄Ti₃O₁₂ (BLT) and SrTa₂O₆ (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the ±5 V bias sweep. The leakage current density was as low as 1×10^-7 A/cm² at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated Fe-FETs showed typical n-channel FETs characteristics.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	65-68
Number of pages	4
DOIs	https://doi.org/10.1109/ISAF.2007.4393169
State	Published - 2007
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 27 May 2007 → 31 May 2007

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	27/05/07 → 31/05/07

Access to Document

10.1109/ISAF.2007.4393169

Cite this

Jeon, H. S., Kim, J. H., Kim, J. N., Park, K. H., & Park, B. E. (2007). Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)₄Ti₃O ₁₂/SrTa₂O₆/Si structures. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 65-68). Article 4393169 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393169

@inproceedings{a86e2f8cd6444e3bbfbc789bee0c934d,

title = "Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)4Ti3O 12/SrTa2O6/Si structures",

abstract = "We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the ±5 V bias sweep. The leakage current density was as low as 1×10-7 A/cm2 at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated Fe-FETs showed typical n-channel FETs characteristics.",

author = "Jeon, {Ho Seung} and Kim, {Jeong Hwan} and Kim, {Joo Nam} and Park, {Kwang Hun} and Park, {Byung Eun}",

year = "2007",

doi = "10.1109/ISAF.2007.4393169",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "65--68",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Jeon, HS, Kim, JH, Kim, JN, Park, KH & Park, BE 2007, Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)₄Ti₃O ₁₂/SrTa₂O₆/Si structures. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393169, IEEE International Symposium on Applications of Ferroelectrics, pp. 65-68, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 27/05/07. https://doi.org/10.1109/ISAF.2007.4393169

Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)₄Ti₃O ₁₂/SrTa₂O₆/Si structures. / Jeon, Ho Seung; Kim, Jeong Hwan; Kim, Joo Nam et al.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 65-68 4393169 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the ±5 V bias sweep. The leakage current density was as low as 1×10-7 A/cm2 at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated Fe-FETs showed typical n-channel FETs characteristics.

AB - We fabricated the ferroelectric-gate field effect transistors (Fe-FETs) using a metal-ferroelectric-insulator-semiconductor (MFIS) structure as a gate configuration using (Bi,La)4Ti3O12 (BLT) and SrTa2O6 (STA) thin films. From the capacitance-voltage (C-V) measurements for MFIS capacitors, a hysteric shift with a clockwise direction was observed and the memory window width was about 1.5 V for the ±5 V bias sweep. The leakage current density was as low as 1×10-7 A/cm2 at 5 V. From drain current-gate voltage characteristics of the fabricated Fe-FETs, the obtained threshold voltage shift (memory window) of the device was about 0.5 V due to the ferroelectric nature of BLT film. The drain current-drain voltage characteristics of the fabricated Fe-FETs showed typical n-channel FETs characteristics.

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Jeon HS, Kim JH, Kim JN, Park KH, Park BE. Structural and electrical properties of ferroelectric-gate field-effect-transistors using Au/(Bi,La)₄Ti₃O ₁₂/SrTa₂O₆/Si structures. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 65-68. 4393169. (IEEE International Symposium on Applications of Ferroelectrics). doi: 10.1109/ISAF.2007.4393169