Structural characterization of nanoporous low-dielectric constant SiCOH films using organosilane precursors

K. Heo, S. G. Park, J. Yoon, S. Jin, S. W. Rhee, M. Ree

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Synchrotron grazing incidence small-angle X-ray scattering and X-ray reflectivity analysis were performed to investigate the nanoporous structure of low dielectric constant carbon-doped silicon oxide films, which were deposited with plasma enhanced chemical vapor deposition from several silane precursors containing one to three vinyl groups with the aid of oxygen gas.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages122-123
Number of pages2
StatePublished - 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 20 May 200724 May 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume4

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Country/TerritoryUnited States
CitySanta Clara, CA
Period20/05/0724/05/07

Keywords

  • Grazing incidence small-angle X-ray scattering
  • Low dielectric constant SiCOH film
  • Organosilane precursor
  • Plasma enhanced chemical vapor deposition
  • Specular X-ray reflectivity

Fingerprint

Dive into the research topics of 'Structural characterization of nanoporous low-dielectric constant SiCOH films using organosilane precursors'. Together they form a unique fingerprint.

Cite this