Structural determination of the low-coverage phase of Al on Si(001) surface

J. Y. Park; J. H. Seo; C. N. Whang; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1063/1.1947767

Structural determination of the low-coverage phase of Al on Si(001) surface

J. Y. Park
, J. H. Seo
, C. N. Whang
, S. S. Kim
, D. S. Choi
, K. H. Chae

Department of Physics

Yonsei University
Mokwon University
Kangwon National University
Korea Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The atomic structure of Al layer on Si(001)- (2×1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 Å from the first layer of Si(001). The bond length of the Al dimer is 2.67 Å. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site.

Original language	English
Article number	244723
Journal	Journal of Chemical Physics
Volume	122
Issue number	24
DOIs	https://doi.org/10.1063/1.1947767
State	Published - 2005

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@article{1680eba391e646d79441fd70335b7ace,

title = "Structural determination of the low-coverage phase of Al on Si(001) surface",

abstract = "The atomic structure of Al layer on Si(001)- (2×1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 {\AA} from the first layer of Si(001). The bond length of the Al dimer is 2.67 {\AA}. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site.",

author = "Park, \{J. Y.\} and Seo, \{J. H.\} and Whang, \{C. N.\} and Kim, \{S. S.\} and Choi, \{D. S.\} and Chae, \{K. H.\}",

year = "2005",

doi = "10.1063/1.1947767",

language = "English",

volume = "122",

journal = "Journal of Chemical Physics",

issn = "0021-9606",

publisher = "American Institute of Physics",

number = "24",

}

TY - JOUR

T1 - Structural determination of the low-coverage phase of Al on Si(001) surface

AU - Park, J. Y.

AU - Seo, J. H.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2005

Y1 - 2005

N2 - The atomic structure of Al layer on Si(001)- (2×1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 Å from the first layer of Si(001). The bond length of the Al dimer is 2.67 Å. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site.

AB - The atomic structure of Al layer on Si(001)- (2×1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 Å from the first layer of Si(001). The bond length of the Al dimer is 2.67 Å. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site.

UR - https://www.scopus.com/pages/publications/22544474990

U2 - 10.1063/1.1947767

DO - 10.1063/1.1947767

M3 - Article

AN - SCOPUS:22544474990

SN - 0021-9606

VL - 122

JO - Journal of Chemical Physics

JF - Journal of Chemical Physics

IS - 24

M1 - 244723

ER -

Structural determination of the low-coverage phase of Al on Si(001) surface

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