Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

Ki Su Keum; Kyoung Min Lee; Jung Hoon Park; Sin Young Kang; Tae Ho Song; Wan Snick Hong

Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

Ki Su Keum, Kyoung Min Lee, Jung Hoon Park, Sin Young Kang, Tae Ho Song, Wan Snick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	2045-2046
Number of pages	2
State	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 7 Dec 2011 → 9 Dec 2011

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	7/12/11 → 9/12/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Keum, K. S., Lee, K. M., Park, J. H., Kang, S. Y., Song, T. H., & Hong, W. S. (2011). Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 2045-2046). (Proceedings of the International Display Workshops; Vol. 3).

@inproceedings{d463077b5379440b9cc7914fa312ff74,

title = "Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates",

abstract = "We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.",

author = "Keum, {Ki Su} and Lee, {Kyoung Min} and Park, {Jung Hoon} and Kang, {Sin Young} and Song, {Tae Ho} and Hong, {Wan Snick}",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "2045--2046",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Keum, KS, Lee, KM, Park, JH, Kang, SY, Song, TH & Hong, WS 2011, Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 3, pp. 2045-2046, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 7/12/11.

Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates. / Keum, Ki Su; Lee, Kyoung Min; Park, Jung Hoon et al.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 2045-2046 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

AU - Keum, Ki Su

AU - Lee, Kyoung Min

AU - Park, Jung Hoon

AU - Kang, Sin Young

AU - Song, Tae Ho

AU - Hong, Wan Snick

PY - 2011

Y1 - 2011

N2 - We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.

AB - We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.

UR - http://www.scopus.com/inward/record.url?scp=84870684601&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84870684601

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 2045

EP - 2046

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

Abstract

Publication series

Conference

UN SDGs

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