Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

Ki Su Keum; Kyoung Min Lee; Jung Hoon Park; Sin Young Kang; Tae Ho Song; Wan Snick Hong

Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

Ki Su Keum
, Kyoung Min Lee
, Jung Hoon Park
, Sin Young Kang
, Tae Ho Song
, Wan Snick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.

Original language	English
Title of host publication	Society for Information Display - 18th International Display Workshops 2011, IDW'11
Pages	2045-2046
Number of pages	2
State	Published - 2011
Event	18th International Display Workshops 2011, IDW 2011 - Nagoya, Japan Duration: 7 Dec 2011 → 9 Dec 2011

Publication series

Name	Proceedings of the International Display Workshops
Volume	3
ISSN (Print)	1883-2490

Conference

Conference	18th International Display Workshops 2011, IDW 2011
Country/Territory	Japan
City	Nagoya
Period	7/12/11 → 9/12/11

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Cite this

Keum, K. S., Lee, K. M., Park, J. H., Kang, S. Y., Song, T. H., & Hong, W. S. (2011). Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates. In Society for Information Display - 18th International Display Workshops 2011, IDW'11 (pp. 2045-2046). (Proceedings of the International Display Workshops; Vol. 3).

@inproceedings{d463077b5379440b9cc7914fa312ff74,

title = "Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates",

abstract = "We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.",

author = "Keum, \{Ki Su\} and Lee, \{Kyoung Min\} and Park, \{Jung Hoon\} and Kang, \{Sin Young\} and Song, \{Tae Ho\} and Hong, \{Wan Snick\}",

year = "2011",

language = "English",

isbn = "9781622761906",

series = "Proceedings of the International Display Workshops",

pages = "2045--2046",

booktitle = "Society for Information Display - 18th International Display Workshops 2011, IDW'11",

note = "18th International Display Workshops 2011, IDW 2011 ; Conference date: 07-12-2011 Through 09-12-2011",

}

Keum, KS, Lee, KM, Park, JH, Kang, SY, Song, TH & Hong, WS 2011, Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates. in Society for Information Display - 18th International Display Workshops 2011, IDW'11. Proceedings of the International Display Workshops, vol. 3, pp. 2045-2046, 18th International Display Workshops 2011, IDW 2011, Nagoya, Japan, 7/12/11.

Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates. / Keum, Ki Su; Lee, Kyoung Min; Park, Jung Hoon et al.
Society for Information Display - 18th International Display Workshops 2011, IDW'11. 2011. p. 2045-2046 (Proceedings of the International Display Workshops; Vol. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

AU - Keum, Ki Su

AU - Lee, Kyoung Min

AU - Park, Jung Hoon

AU - Kang, Sin Young

AU - Song, Tae Ho

AU - Hong, Wan Snick

PY - 2011

Y1 - 2011

N2 - We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.

AB - We fabricated silicon(Si) films for nc-Si TFTs fabricated at low temperature (≤ 100°C) by Cat-CVD. The filament was arranged in a row. Filament distance and length was changed to uniformity at a low process temperature. Deviations and deposition rates of Si film thickness were dependent on filament distance.

UR - https://www.scopus.com/pages/publications/84870684601

M3 - Conference contribution

AN - SCOPUS:84870684601

SN - 9781622761906

T3 - Proceedings of the International Display Workshops

SP - 2045

EP - 2046

BT - Society for Information Display - 18th International Display Workshops 2011, IDW'11

T2 - 18th International Display Workshops 2011, IDW 2011

Y2 - 7 December 2011 through 9 December 2011

ER -

Study of filament geometry for large area nc-Si TFTs fabricated at low temperature(≤ 100°C) by Cat-CVD on flexible substrates

Abstract

Publication series

Conference

UN SDGs

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