Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays

Sin Young Kang; Ki Su Keum; Jung Hoon Park; Tae Ho Song; Wan Shick Hong

doi:10.1149/04525.0001ecst

Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays

Sin Young Kang, Ki Su Keum, Jung Hoon Park, Tae Ho Song, Wan Shick Hong

Department of Materials Science and Engineering

University of Seoul

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Thin film dual select diodes (TF-DSDs) were fabricated at a low temperature (180 °C) for applications to pixel switching devices for flexible displays. The Silicon-rich silicon nitride (SRSN) films were prepared by catalytic chemical vapor deposition (Cat-CVD) technique. Composition of the source gas mixture affected directly the photoluminescence spectra and the current-voltage characteristics of the SRSN films. We observed non-linear, asymmetric currentvoltage characteristics that can be tuned by controlling the film deposition parameters.

Original language	English
Title of host publication	Nanotechnology (General) - 221st ECS Meeting
Publisher	Electrochemical Society Inc.
Pages	1-4
Number of pages	4
Edition	25
ISBN (Electronic)	9781623320447
ISBN (Print)	9781623320447
DOIs	https://doi.org/10.1149/04525.0001ecst
State	Published - 2012
Event	Symposium on Nanotechnology General Session - 221st ECS Meeting - Seattle, WA, United States Duration: 6 May 2012 → 10 May 2012

Publication series

Name	ECS Transactions
Number	25
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Symposium on Nanotechnology General Session - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	6/05/12 → 10/05/12

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10.1149/04525.0001ecst

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title = "Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays",

abstract = "Thin film dual select diodes (TF-DSDs) were fabricated at a low temperature (180 °C) for applications to pixel switching devices for flexible displays. The Silicon-rich silicon nitride (SRSN) films were prepared by catalytic chemical vapor deposition (Cat-CVD) technique. Composition of the source gas mixture affected directly the photoluminescence spectra and the current-voltage characteristics of the SRSN films. We observed non-linear, asymmetric currentvoltage characteristics that can be tuned by controlling the film deposition parameters.",

author = "Kang, {Sin Young} and Keum, {Ki Su} and Park, {Jung Hoon} and Song, {Tae Ho} and Hong, {Wan Shick}",

year = "2012",

doi = "10.1149/04525.0001ecst",

language = "English",

isbn = "9781623320447",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "25",

pages = "1--4",

booktitle = "Nanotechnology (General) - 221st ECS Meeting",

address = "United States",

edition = "25",

note = "Symposium on Nanotechnology General Session - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

}

Kang, SY, Keum, KS, Park, JH, Song, TH & Hong, WS 2012, Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays. in Nanotechnology (General) - 221st ECS Meeting. 25 edn, ECS Transactions, no. 25, vol. 45, Electrochemical Society Inc., pp. 1-4, Symposium on Nanotechnology General Session - 221st ECS Meeting, Seattle, WA, United States, 6/05/12. https://doi.org/10.1149/04525.0001ecst

Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays. / Kang, Sin Young; Keum, Ki Su; Park, Jung Hoon et al.
Nanotechnology (General) - 221st ECS Meeting. 25. ed. Electrochemical Society Inc., 2012. p. 1-4 (ECS Transactions; Vol. 45, No. 25).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays

AU - Kang, Sin Young

AU - Keum, Ki Su

AU - Park, Jung Hoon

AU - Song, Tae Ho

AU - Hong, Wan Shick

PY - 2012

Y1 - 2012

N2 - Thin film dual select diodes (TF-DSDs) were fabricated at a low temperature (180 °C) for applications to pixel switching devices for flexible displays. The Silicon-rich silicon nitride (SRSN) films were prepared by catalytic chemical vapor deposition (Cat-CVD) technique. Composition of the source gas mixture affected directly the photoluminescence spectra and the current-voltage characteristics of the SRSN films. We observed non-linear, asymmetric currentvoltage characteristics that can be tuned by controlling the film deposition parameters.

AB - Thin film dual select diodes (TF-DSDs) were fabricated at a low temperature (180 °C) for applications to pixel switching devices for flexible displays. The Silicon-rich silicon nitride (SRSN) films were prepared by catalytic chemical vapor deposition (Cat-CVD) technique. Composition of the source gas mixture affected directly the photoluminescence spectra and the current-voltage characteristics of the SRSN films. We observed non-linear, asymmetric currentvoltage characteristics that can be tuned by controlling the film deposition parameters.

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U2 - 10.1149/04525.0001ecst

DO - 10.1149/04525.0001ecst

M3 - Conference contribution

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SN - 9781623320447

T3 - ECS Transactions

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BT - Nanotechnology (General) - 221st ECS Meeting

PB - Electrochemical Society Inc.

T2 - Symposium on Nanotechnology General Session - 221st ECS Meeting

Y2 - 6 May 2012 through 10 May 2012

ER -

Study of low temperature (180 °C) dual-select-diode for applications to pixel switching devices for flexible displays

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