Study of transport and dielectric of resistive memory states in NiO thin film

Min Gyu Kim; Sun Man Kim; Eun Jip Choi; Seung Eon Moon; Jonghyurk Park; Hyoung Chan Kim; Bae Ho Park; Myoung Jae Lee; Sunae Seo; David H. Seo; Seung Eun Ahn; In Kyeong Yoo

doi:10.1143/JJAP.44.L1301

Study of transport and dielectric of resistive memory states in NiO thin film

Min Gyu Kim, Sun Man Kim, Eun Jip Choi, Seung Eon Moon, Jonghyurk Park, Hyoung Chan Kim, Bae Ho Park, Myoung Jae Lee, Sunae Seo, David H. Seo, Seung Eun Ahn, In Kyeong Yoo

Department of Physics

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ω_p² in the metallic low-R state is estimated to be 1.2 × 10⁹/cm³.

Original language	English
Pages (from-to)	L1301-L1303
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	42-45
DOIs	https://doi.org/10.1143/JJAP.44.L1301
State	Published - 2005

Keywords

Debye relaxation
Drude carrier model
RRAM
Switching
Transport

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Kim, M. G., Kim, S. M., Choi, E. J., Moon, S. E., Park, J., Kim, H. C., Park, B. H., Lee, M. J., Seo, S., Seo, D. H., Ahn, S. E., & Yoo, I. K. (2005). Study of transport and dielectric of resistive memory states in NiO thin film. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 44(42-45), L1301-L1303. https://doi.org/10.1143/JJAP.44.L1301

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title = "Study of transport and dielectric of resistive memory states in NiO thin film",

abstract = "We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ωp2 in the metallic low-R state is estimated to be 1.2 × 109/cm3.",

keywords = "Debye relaxation, Drude carrier model, RRAM, Switching, Transport",

author = "Kim, {Min Gyu} and Kim, {Sun Man} and Choi, {Eun Jip} and Moon, {Seung Eon} and Jonghyurk Park and Kim, {Hyoung Chan} and Park, {Bae Ho} and Lee, {Myoung Jae} and Sunae Seo and Seo, {David H.} and Ahn, {Seung Eun} and Yoo, {In Kyeong}",

year = "2005",

doi = "10.1143/JJAP.44.L1301",

language = "English",

volume = "44",

pages = "L1301--L1303",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Study of transport and dielectric of resistive memory states in NiO thin film

AU - Kim, Min Gyu

AU - Kim, Sun Man

AU - Choi, Eun Jip

AU - Moon, Seung Eon

AU - Park, Jonghyurk

AU - Kim, Hyoung Chan

AU - Park, Bae Ho

AU - Lee, Myoung Jae

AU - Seo, Sunae

AU - Seo, David H.

AU - Ahn, Seung Eun

AU - Yoo, In Kyeong

PY - 2005

Y1 - 2005

N2 - We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ωp2 in the metallic low-R state is estimated to be 1.2 × 109/cm3.

AB - We have measured the DC resistance R(T) and AC dielectric constant ε(ω) for the bistable high-R and low-R states of NiO thin film. The high-R state shows thermally activated resistance and Debye relaxation of ε(ω). In the low-R state, R(T) exhibits a metallic temperature dependence of R(300 K)/R(5 K) = 1.6. The value of ε(ω) is drastically different from that of the high-/? state, and we interpret it in terms of the free-carrier Drude dielectric response. The plasma frequency ωp2 in the metallic low-R state is estimated to be 1.2 × 109/cm3.

KW - Debye relaxation

KW - Drude carrier model

KW - RRAM

KW - Switching

KW - Transport

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U2 - 10.1143/JJAP.44.L1301

DO - 10.1143/JJAP.44.L1301

M3 - Article

AN - SCOPUS:30344481683

SN - 0021-4922

VL - 44

SP - L1301-L1303

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 42-45

ER -

Study of transport and dielectric of resistive memory states in NiO thin film

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Keywords

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