Superconducting Sr2RuO4Thin Films without Out-of-Phase Boundaries by Higher-Order Ruddlesden-Popper Intergrowth

Jinkwon Kim, Junsik Mun, Carla M. Palomares García, Bongju Kim, Robin S. Perry, Yongcheol Jo, Hyunsik Im, Han Gyeol Lee, Eun Kyo Ko, Seo Hyoung Chang, Suk Bum Chung, Miyoung Kim, Jason W.A. Robinson, Shingo Yonezawa, Yoshiteru Maeno, Lingfei Wang, Tae Won Noh

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Ruddlesden-Popper (RP) phases (An+1BnO3n+1, n = 1, 2,···) have attracted intensive research with diverse functionalities for device applications. However, the realization of a high-quality RP-phase film is hindered by the formation of out-of-phase boundaries (OPBs) that occur at terrace edges, originating from lattice mismatch in the c-axis direction with the A′B′O3 (n = ∞) substrate. Here, using strontium ruthenate RP-phase Sr2RuO4 (n = 1) as a model system, an experimental approach for suppressing OPBs was developed. By tuning the growth parameters, the Sr3Ru2O7 (n = 2) phase was formed in a controlled manner near the film-substrate interface. This higher-order RP-phase then blocked the subsequent formation of OPBs, resulting in nearly defect-free Sr2RuO4 layer at the upper region of the film. Consequently, the Sr2RuO4 thin films exhibited superconductivity up to 1.15 K, which is the highest among Sr2RuO4 films grown by pulsed laser deposition. This work paves the way for synthesizing pristine RP-phase heterostructures and exploring their unique physical properties.

Original languageEnglish
Pages (from-to)4185-4192
Number of pages8
JournalNano Letters
Volume21
Issue number10
DOIs
StatePublished - 26 May 2021

Keywords

  • Ruddlesden-Popper phase
  • SrRuOthin films
  • out-of-phase boundary
  • pulsed laser deposition
  • unconventional superconductivity

Fingerprint

Dive into the research topics of 'Superconducting Sr2RuO4Thin Films without Out-of-Phase Boundaries by Higher-Order Ruddlesden-Popper Intergrowth'. Together they form a unique fingerprint.

Cite this