Surface and interface states of Bi2Se3 thin films investigated by optical second-harmonic generation and terahertz emission

S. Y. Hamh; S. H. Park; S. K. Jerng; J. H. Jeon; S. H. Chun; J. H. Jeon; S. J. Kahng; K. Yu; E. J. Choi; S. Kim; S. H. Choi; N. Bansal; S. Oh; Joonbum Park; Byung Woo Kho; Jun Sung Kim; J. S. Lee

doi:10.1063/1.4941420

Surface and interface states of Bi₂Se₃ thin films investigated by optical second-harmonic generation and terahertz emission

S. Y. Hamh, S. H. Park, S. K. Jerng, J. H. Jeon, S. H. Chun, J. H. Jeon, S. J. Kahng, K. Yu, E. J. Choi, S. Kim, S. H. Choi, N. Bansal, S. Oh, Joonbum Park, Byung Woo Kho, Jun Sung Kim, J. S. Lee

Department of Physics

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13 Scopus citations

Abstract

We investigate the surface and interface states of Bi₂Se₃ thin films by using the second-harmonic generation technique. Distinct from the surface of bulk crystals, the film surface and interface show the isotropic azimuth dependence of second-harmonic intensity, which is attributed to the formation of randomly oriented domains on the in-plane. Based on the nonlinear susceptibility deduced from the model fitting, we determine that the surface band bending induced in a space charge region occurs more strongly at the film interface facing the Al₂O₃ substrate or capping layer compared with the interface facing the air. We demonstrate that distinct behavior of the terahertz electric field emitted from the samples can provide further information about the surface electronic state of Bi₂Se₃.

Original language	English
Article number	051609
Journal	Applied Physics Letters
Volume	108
Issue number	5
DOIs	https://doi.org/10.1063/1.4941420
State	Published - 1 Feb 2016

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Hamh, S. Y., Park, S. H., Jerng, S. K., Jeon, J. H., Chun, S. H., Jeon, J. H., Kahng, S. J., Yu, K., Choi, E. J., Kim, S., Choi, S. H., Bansal, N., Oh, S., Park, J., Kho, B. W., Kim, J. S., & Lee, J. S. (2016). Surface and interface states of Bi₂Se₃ thin films investigated by optical second-harmonic generation and terahertz emission. Applied Physics Letters, 108(5), Article 051609. https://doi.org/10.1063/1.4941420

@article{b17d9169d3dd4580a303d02c18f63183,

title = "Surface and interface states of Bi2Se3 thin films investigated by optical second-harmonic generation and terahertz emission",

abstract = "We investigate the surface and interface states of Bi2Se3 thin films by using the second-harmonic generation technique. Distinct from the surface of bulk crystals, the film surface and interface show the isotropic azimuth dependence of second-harmonic intensity, which is attributed to the formation of randomly oriented domains on the in-plane. Based on the nonlinear susceptibility deduced from the model fitting, we determine that the surface band bending induced in a space charge region occurs more strongly at the film interface facing the Al2O3 substrate or capping layer compared with the interface facing the air. We demonstrate that distinct behavior of the terahertz electric field emitted from the samples can provide further information about the surface electronic state of Bi2Se3.",

author = "Hamh, {S. Y.} and Park, {S. H.} and Jerng, {S. K.} and Jeon, {J. H.} and Chun, {S. H.} and Jeon, {J. H.} and Kahng, {S. J.} and K. Yu and Choi, {E. J.} and S. Kim and Choi, {S. H.} and N. Bansal and S. Oh and Joonbum Park and Kho, {Byung Woo} and Kim, {Jun Sung} and Lee, {J. S.}",

note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

year = "2016",

month = feb,

day = "1",

doi = "10.1063/1.4941420",

language = "English",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

Hamh, SY, Park, SH, Jerng, SK, Jeon, JH, Chun, SH, Jeon, JH, Kahng, SJ, Yu, K, Choi, EJ, Kim, S, Choi, SH, Bansal, N, Oh, S, Park, J, Kho, BW, Kim, JS & Lee, JS 2016, 'Surface and interface states of Bi₂Se₃ thin films investigated by optical second-harmonic generation and terahertz emission', Applied Physics Letters, vol. 108, no. 5, 051609. https://doi.org/10.1063/1.4941420

TY - JOUR

T1 - Surface and interface states of Bi2Se3 thin films investigated by optical second-harmonic generation and terahertz emission

AU - Hamh, S. Y.

AU - Park, S. H.

AU - Jerng, S. K.

AU - Jeon, J. H.

AU - Chun, S. H.

AU - Jeon, J. H.

AU - Kahng, S. J.

AU - Yu, K.

AU - Choi, E. J.

AU - Kim, S.

AU - Choi, S. H.

AU - Bansal, N.

AU - Oh, S.

AU - Park, Joonbum

AU - Kho, Byung Woo

AU - Kim, Jun Sung

AU - Lee, J. S.

PY - 2016/2/1

Y1 - 2016/2/1

N2 - We investigate the surface and interface states of Bi2Se3 thin films by using the second-harmonic generation technique. Distinct from the surface of bulk crystals, the film surface and interface show the isotropic azimuth dependence of second-harmonic intensity, which is attributed to the formation of randomly oriented domains on the in-plane. Based on the nonlinear susceptibility deduced from the model fitting, we determine that the surface band bending induced in a space charge region occurs more strongly at the film interface facing the Al2O3 substrate or capping layer compared with the interface facing the air. We demonstrate that distinct behavior of the terahertz electric field emitted from the samples can provide further information about the surface electronic state of Bi2Se3.

AB - We investigate the surface and interface states of Bi2Se3 thin films by using the second-harmonic generation technique. Distinct from the surface of bulk crystals, the film surface and interface show the isotropic azimuth dependence of second-harmonic intensity, which is attributed to the formation of randomly oriented domains on the in-plane. Based on the nonlinear susceptibility deduced from the model fitting, we determine that the surface band bending induced in a space charge region occurs more strongly at the film interface facing the Al2O3 substrate or capping layer compared with the interface facing the air. We demonstrate that distinct behavior of the terahertz electric field emitted from the samples can provide further information about the surface electronic state of Bi2Se3.

UR - http://www.scopus.com/inward/record.url?scp=84957101013&partnerID=8YFLogxK

U2 - 10.1063/1.4941420

DO - 10.1063/1.4941420

M3 - Article

AN - SCOPUS:84957101013

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 051609

ER -

Surface and interface states of Bi₂Se₃ thin films investigated by optical second-harmonic generation and terahertz emission

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