Surface structure of low-coveraged Cs on Si(001)-(2×1) system

J. Y. Park, J. H. Seo, J. Y. Kim, C. N. Whang, S. S. Kim, D. S. Choi, K. H. Chae

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Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(001) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(001)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(001)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(001) surface. It is also found that Cs atoms adsorbed on Si(001) surface with a height of 2.83±0.05 Å from the second layer of Si(001) surface.

Original languageEnglish
Pages (from-to)305-311
Number of pages7
JournalApplied Surface Science
Issue number1-4
StatePublished - 15 Feb 2005


  • Alkali metals
  • Cesium
  • Low energy ion scattering (LEIS)
  • Morphology
  • Roughness and topography
  • Silicon
  • Surface structure


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