Surface structure of low-coveraged Cs on Si(001)-(2×1) system

J. Y. Park; J. H. Seo; J. Y. Kim; C. N. Whang; S. S. Kim; D. S. Choi; K. H. Chae

doi:10.1016/j.apsusc.2004.06.144

Surface structure of low-coveraged Cs on Si(001)-(2×1) system

J. Y. Park, J. H. Seo, J. Y. Kim, C. N. Whang, S. S. Kim, D. S. Choi, K. H. Chae

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(001) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(001)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(001)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(001) surface. It is also found that Cs atoms adsorbed on Si(001) surface with a height of 2.83±0.05 Å from the second layer of Si(001) surface.

Original language	English
Pages (from-to)	305-311
Number of pages	7
Journal	Applied Surface Science
Volume	240
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2004.06.144
State	Published - 15 Feb 2005

Keywords

Alkali metals
Cesium
Low energy ion scattering (LEIS)
Morphology
Roughness and topography
Silicon
Surface structure

Access to Document

10.1016/j.apsusc.2004.06.144

Cite this

@article{fbe36c448a56488ab31861eb1388ce44,

title = "Surface structure of low-coveraged Cs on Si(001)-(2×1) system",

abstract = "Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(001) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(001)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(001)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(001) surface. It is also found that Cs atoms adsorbed on Si(001) surface with a height of 2.83±0.05 {\AA} from the second layer of Si(001) surface.",

keywords = "Alkali metals, Cesium, Low energy ion scattering (LEIS), Morphology, Roughness and topography, Silicon, Surface structure",

author = "Park, {J. Y.} and Seo, {J. H.} and Kim, {J. Y.} and Whang, {C. N.} and Kim, {S. S.} and Choi, {D. S.} and Chae, {K. H.}",

year = "2005",

month = feb,

day = "15",

doi = "10.1016/j.apsusc.2004.06.144",

language = "English",

volume = "240",

pages = "305--311",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

number = "1-4",

}

TY - JOUR

T1 - Surface structure of low-coveraged Cs on Si(001)-(2×1) system

AU - Park, J. Y.

AU - Seo, J. H.

AU - Kim, J. Y.

AU - Whang, C. N.

AU - Kim, S. S.

AU - Choi, D. S.

AU - Chae, K. H.

PY - 2005/2/15

Y1 - 2005/2/15

N2 - Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(001) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(001)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(001)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(001) surface. It is also found that Cs atoms adsorbed on Si(001) surface with a height of 2.83±0.05 Å from the second layer of Si(001) surface.

AB - Alkali metals (AM) on semiconductors have been investigated as a simple model system for the metal-semiconductor interfaces due to their simple electronic structures. Especially, cesium (Cs) on Si(001) surface has been studied with various experimental techniques. In this study, we investigated the atomic structure of initial Cs adsorption on Si(001)-(2×1) surface using coaxial impact collision ion scattering spectroscopy. When Cs atoms are adsorbed on Si(001)-(2×1) up to 0.2 ML at room temperature, the initial adsorption site is on-top T3 site with poor periodicity and the length of Si dimer is reserved as in the clean Si(001) surface. It is also found that Cs atoms adsorbed on Si(001) surface with a height of 2.83±0.05 Å from the second layer of Si(001) surface.

KW - Alkali metals

KW - Cesium

KW - Low energy ion scattering (LEIS)

KW - Morphology

KW - Roughness and topography

KW - Silicon

KW - Surface structure

UR - http://www.scopus.com/inward/record.url?scp=10444250327&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2004.06.144

DO - 10.1016/j.apsusc.2004.06.144

M3 - Article

AN - SCOPUS:10444250327

SN - 0169-4332

VL - 240

SP - 305

EP - 311

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1-4

ER -

Surface structure of low-coveraged Cs on Si(001)-(2×1) system

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this