Abstract
We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as 200 μm in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.
Original language | English |
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Pages (from-to) | 694-696 |
Number of pages | 3 |
Journal | Applied Chemistry for Engineering |
Volume | 21 |
Issue number | 6 |
State | Published - Dec 2010 |
Keywords
- Silicon films
- Silicon nanoparticles
- Solution route