Abstract
We have synthesized boron (or phosphorous) doped silicon nanoparticles (Si-NPs) by a solution process. The surfaces of the Si-NPs were terminated with various alkyl groups to form a protecting layer. The Si-NPs were characterized by UV-Vis, PL, FTIR, and NMR. Through a microwave sintering process, the crystalline thin films of the Si-NPs were prepared by removing the surface alkyl groups. The TEM and SEM images reveal that contiguous films as large as 200 μm in diameter were formed with a cubic structure. The electrical conductivity of the Si film was controlled by a doping type.
| Original language | English |
|---|---|
| Pages (from-to) | 694-696 |
| Number of pages | 3 |
| Journal | Applied Chemistry for Engineering |
| Volume | 21 |
| Issue number | 6 |
| State | Published - Dec 2010 |
Keywords
- Silicon films
- Silicon nanoparticles
- Solution route