Synthesis and thin-film transistor performance of fluorene-based copolymers containing thiophene moieties having different position of alkyl side chain

Hoyoul Kong, Eunhee Lim, Young Kwan Jung, Moo Jin Park, Taek Ahn, Mi Hye Yi, In Nam Kang, Hong Ku Shim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We have synthesized fluorene-based copolymers (PFHT-TT-TH and PF-TH-TT-HT) containing thiophene moieties having different position of alkyl side chain via the palladium-catalyzed Suzuki coupling reaction. The number-average molecular weight (Mn)s of PF-HT-TT-TH and PFTH-TT-HT were respectively found to be 11,800 and 22,300. These polymers dissolve in common organic solvents such as chloroform, chlorobenzene and toluene, etc. The PL emission peak of a film of PF-TH-TT-HT is clearly red-shifted with respect to PF-HT-TT-TH, due to the repulsion of alkyl side chains in the between fluorene and thiophene moieties. Through studies of X-ray diffraction (XRD), we could access molecular alignment. The thermal properties of these polymers were measured by TGA and DSC, and electrical properties were studied by cyclic voltammetry (CV). They exhibited different field-effect transistor (FET) properties depending on their positions of alkyl side chains. The PF-TH-TT-HT having little repulsion showed better field-effect transistor performance than that of PF-HT-TT-TH.

Original languageEnglish
Title of host publication2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Pages152-155
Number of pages4
StatePublished - 2007
Event2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007 - Santa Clara, CA, United States
Duration: 20 May 200724 May 2007

Publication series

Name2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007, Technical Proceedings
Volume1

Conference

Conference2007 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2007
Country/TerritoryUnited States
CitySanta Clara, CA
Period20/05/0724/05/07

Keywords

  • Field-effect transistor

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