TEM observation of ferroelectric films grown on silicon using Y2O3 buffer layer

Mohammad Mustafa Sarinanto, Shogo Imada, Shigeto Shoriki, Byung Eun Park, Eisuke Tokumitsu, Hiroshi Ishiwara

Research output: Contribution to journalConference articlepeer-review


Ferroelectric films grown on Si substrates using Y2O3 buffer layers were investigated by cross-sectional high-resolution transmission electron microscopy (HRTEM). It was found that no interfacial SiO2 layer was formed when an Y2O3 layer was grown by molecular beam epitaxy (MBE) on a Si(111) substrate at 600°C, while that a SiO2 layer was formed on a Si(100) substrate under the same growth conditions. Then, ferroelectric YMnO3, SrBi2Ta2O9(SBT), and Pb(Zr,Ti)O3(PZT) films were deposited on the Y2O3/Si structures and cross-sections were observed. It was found that the interfacial SiO2 layer about 5 to 6 nm in the thickness was formed even on a Si(111) substrate after deposition of the ferroelectric film. It was also found that polygrains in PZT film were much smaller than those in SBT, although both films were formed by the same sol-gel driven method.

Original languageEnglish
Pages (from-to)81-91
Number of pages11
JournalIntegrated Ferroelectrics
Issue number1
StatePublished - 1999
EventThe 11th International Symposium on Integrated Ferroelectrics (ISIF99) - Colorado Springs, CO, USA
Duration: 7 Mar 199910 Mar 1999


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