Temperature-dependent high-resolution X-ray photoelectron spectroscopic study on Ge1Sb2Te4

Y. M. Lee, M. C. Jung, H. J. Shin, K. Kim, S. A. Song, H. S. Jeong, C. Ko, M. Han

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Oxygen-free and amorphous Ge1Sb2Te4 thin film was obtained in an ultra-high vacuum and then annealed in situ to the stable-phase temperature. High-resolution X-ray photoelectron spectroscopy using synchrotron radiation was performed on the film at the different annealing temperatures of 100, 130, 150, 180, and 250 °C. The Te 4d, Sb 4d, and Ge 3d shallow core levels as well as the valence-band spectra were acquired. In the shallow core-level spectra, we observed distinguishable changes in the Sb 4d and Ge 3d levels as the film phase changed. As the temperature increased, a higher binding-energy (BE) component appeared at the Sb 4d level, the intensity of the component increased, and the spin-orbit split feature was enhanced at the Ge 3d level. In the valence-band spectra, a slight increase was observed at 0-1, ~ 3, ~ 9, and ~ 12 eV BE, and a decrease, at ~ 1.5 and ~ 4.5 eV BE. The energy resolution employed in this study was about 150 meV.

Original languageEnglish
Pages (from-to)5670-5672
Number of pages3
JournalThin Solid Films
Issue number20
StatePublished - 2 Aug 2010


  • Core-level spectra
  • GeSbTe
  • HR-XPS
  • PRAM


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