@inproceedings{28824402272a489486107d99cf460ea9,
title = "Temperature dependent transport study of a single-wall carbon nanotube network",
abstract = "We report the temperature dependence of transport properties of SWCNT network FET devices. The nonlinear ISD-VSD characteristics become linear as increasing temperature because of more diffusive carriers at higher temperature. Zero-bias conductance data is calculated and fitted with simple power-law formula, G∝Ta. We obtained two different exponent values of 0.064 and 0.70 from the temperature range from 4.6 K to 40 K, and from 40 K to 295 K respectively. The power-law exponent at high temperature range is consistent with previous studies. However, unusual small power-law exponent at low temperature is attributed to the network junctions, which are disturbing 1D transport in the network structure.",
keywords = "Carbon nanotube, Conductance, Electrical transport, Network",
author = "Jongseung Hwang and Oh, {Jung Hyun} and Son, {Maeng Ho} and Doyeol Ahn and Kim, {Hee Tae} and Hwang, {Sung Woo}",
year = "2009",
doi = "10.1063/1.3295440",
language = "English",
isbn = "9780735407367",
series = "AIP Conference Proceedings",
pages = "339--340",
booktitle = "Physics of Semiconductors - 29th International Conference, ICPS 29",
note = "29th International Conference on Physics of Semiconductors, ICPS 29 ; Conference date: 27-07-2008 Through 01-08-2008",
}