Terahertz electrical characteristics of heavily doped n-GaAs thin films

Ui Whan Kim; Seung Jae Oh; Inhee Maeng; Chul Kang; Joo Hiuk Son

doi:10.3938/jkps.50.789

Terahertz electrical characteristics of heavily doped n-GaAs thin films

Ui Whan Kim, Seung Jae Oh, Inhee Maeng, Chul Kang, Joo Hiuk Son

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

We have measured the frequency-dependent optical and electrical constants of heavily doped n-GaAs thin films from 0.2 to 2.5 THz using terahertz time-domain spectroscopy. Two heavily doped GaAs thin films were grown on semi-insulating GaAs wafers, the target densities of which were 0.5 × 10¹⁸ cm^-3 and 1 × 10¹⁸ cm^-3. The power absorptions of these samples were measured and their conductivities were obtained through subsequent analysis. The results were fitted to the Drude theory, which yielded the carrier densities and mobilities. The mobility was found to be smaller as the carrier density increased and agreed with the literature values.

Original language	English
Pages (from-to)	789-792
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	50
Issue number	3
DOIs	https://doi.org/10.3938/jkps.50.789
State	Published - Mar 2007

Keywords

Heavily doped semiconductors
Terahertz electromagnetic waves
Thin film

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abstract = "We have measured the frequency-dependent optical and electrical constants of heavily doped n-GaAs thin films from 0.2 to 2.5 THz using terahertz time-domain spectroscopy. Two heavily doped GaAs thin films were grown on semi-insulating GaAs wafers, the target densities of which were 0.5 × 1018 cm-3 and 1 × 1018 cm-3. The power absorptions of these samples were measured and their conductivities were obtained through subsequent analysis. The results were fitted to the Drude theory, which yielded the carrier densities and mobilities. The mobility was found to be smaller as the carrier density increased and agreed with the literature values.",

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AU - Kim, Ui Whan

AU - Oh, Seung Jae

AU - Maeng, Inhee

AU - Kang, Chul

AU - Son, Joo Hiuk

PY - 2007/3

Y1 - 2007/3

N2 - We have measured the frequency-dependent optical and electrical constants of heavily doped n-GaAs thin films from 0.2 to 2.5 THz using terahertz time-domain spectroscopy. Two heavily doped GaAs thin films were grown on semi-insulating GaAs wafers, the target densities of which were 0.5 × 1018 cm-3 and 1 × 1018 cm-3. The power absorptions of these samples were measured and their conductivities were obtained through subsequent analysis. The results were fitted to the Drude theory, which yielded the carrier densities and mobilities. The mobility was found to be smaller as the carrier density increased and agreed with the literature values.

AB - We have measured the frequency-dependent optical and electrical constants of heavily doped n-GaAs thin films from 0.2 to 2.5 THz using terahertz time-domain spectroscopy. Two heavily doped GaAs thin films were grown on semi-insulating GaAs wafers, the target densities of which were 0.5 × 1018 cm-3 and 1 × 1018 cm-3. The power absorptions of these samples were measured and their conductivities were obtained through subsequent analysis. The results were fitted to the Drude theory, which yielded the carrier densities and mobilities. The mobility was found to be smaller as the carrier density increased and agreed with the literature values.

KW - Heavily doped semiconductors

KW - Terahertz electromagnetic waves

KW - Thin film

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JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

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Terahertz electrical characteristics of heavily doped n-GaAs thin films

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