Terahertz pulse probing of metal-oxide-semiconductor inversion layers

J. Son, S. Jeong, E. Budiarto, J. Bokor

Research output: Contribution to journalConference articlepeer-review


Femtosecond-laser-driven terahertz (THz) electromagnetic pulses have been used to study the carrier transport dynamics of bulk semiconductors and modulation-doped GaAs quantum wells by observing absorption spectra. Using a Drude fit to the absorption measurement results, carrier density and mobility have been obtained. This paper applies this technique to non-contact investigation of the carrier dynamics of metal-oxide-semiconductor (MOS) inversion layers. The inversion layer mobility is typically obtained through the drain current measurements versus drain voltage for a given gate voltage. This method therefore requires a full MOS transistor structure, including source and drain. The THz technique only requires a simple MOS capacitor to determine the mobility.

Original languageEnglish
Pages (from-to)84-85
Number of pages2
JournalConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
StatePublished - 1996
EventProceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA
Duration: 2 Jun 19967 Jun 1996


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