Abstract
Femtosecond-laser-driven terahertz (THz) electromagnetic pulses have been used to study the carrier transport dynamics of bulk semiconductors and modulation-doped GaAs quantum wells by observing absorption spectra. Using a Drude fit to the absorption measurement results, carrier density and mobility have been obtained. This paper applies this technique to non-contact investigation of the carrier dynamics of metal-oxide-semiconductor (MOS) inversion layers. The inversion layer mobility is typically obtained through the drain current measurements versus drain voltage for a given gate voltage. This method therefore requires a full MOS transistor structure, including source and drain. The THz technique only requires a simple MOS capacitor to determine the mobility.
| Original language | English |
|---|---|
| Pages (from-to) | 84-85 |
| Number of pages | 2 |
| Journal | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS |
| State | Published - 1996 |
| Event | Proceedings of the 1996 Conference on Lasers and Electro-Optics, CLEO'96 - Anaheim, CA, USA Duration: 2 Jun 1996 → 7 Jun 1996 |