Test scheme and degradation model of Accumulated Electrostatic Discharge (ESD) damage for Insulated Gate Bipolar Transistor (IGBT) prognostics
- Junmin Lee
- , Hyunseok Oh
- , Chan Hee Park
- , Byeng Dong Youn
- , Bongtae Han
- Seoul National University
- Gwangju Institute of Science and Technology
- Onepredict Inc.
- University of Maryland, College Park
Research output: Contribution to journal › Article › peer-review
8
Scopus
citations