The analysis of seu in nanowire fets and nanosheet fets

Yunjae Kim; Myounggon Kang

doi:10.3390/electronics10070863

The analysis of seu in nanowire fets and nanosheet fets

Yunjae Kim, Myounggon Kang

School of Advanced Fusion Studies

Korea National University of Transportation

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90^◦, whereas the least occurred at 15^◦ . SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.

Original language	English
Article number	863
Journal	Electronics (Switzerland)
Volume	10
Issue number	7
DOIs	https://doi.org/10.3390/electronics10070863
State	Published - 1 Apr 2021

Keywords

Angular effect
Nanosheet FET
Nanowire FET
Radiation effect
Single-event upset (SEU)

Access to Document

10.3390/electronics10070863

Cite this

@article{62fbb253e548495c936b2db62e034d86,

title = "The analysis of seu in nanowire fets and nanosheet fets",

abstract = "The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90◦, whereas the least occurred at 15◦ . SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.",

keywords = "Angular effect, Nanosheet FET, Nanowire FET, Radiation effect, Single-event upset (SEU)",

author = "Yunjae Kim and Myounggon Kang",

note = "Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2021",

month = apr,

day = "1",

doi = "10.3390/electronics10070863",

language = "English",

volume = "10",

journal = "Electronics (Switzerland)",

issn = "2079-9292",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

number = "7",

}

TY - JOUR

T1 - The analysis of seu in nanowire fets and nanosheet fets

AU - Kim, Yunjae

AU - Kang, Myounggon

PY - 2021/4/1

Y1 - 2021/4/1

N2 - The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90◦, whereas the least occurred at 15◦ . SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.

AB - The effects of the single-event upset (SEU) generated by radiation on nanowire field-effect transistors (NW-FETs) and nanosheet (NS)-FETs were analyzed according to the incident angle and location of radiation, by using three-dimensional technology computer-aided design tools. The greatest SEU occurred when the particle was incident at 90◦, whereas the least occurred at 15◦ . SEU was significantly affected when the particle was incident on the drain, as compared to when it was incident on the source. The NS-FETs were robust to SEU, unlike the NW-FETs. This phenomenon can be attributed to the difference in the area exposed to radiation, even if the channel widths of these devices were identical.

KW - Angular effect

KW - Nanosheet FET

KW - Nanowire FET

KW - Radiation effect

KW - Single-event upset (SEU)

UR - http://www.scopus.com/inward/record.url?scp=85103512899&partnerID=8YFLogxK

U2 - 10.3390/electronics10070863

DO - 10.3390/electronics10070863

M3 - Article

AN - SCOPUS:85103512899

SN - 2079-9292

VL - 10

JO - Electronics (Switzerland)

JF - Electronics (Switzerland)

IS - 7

M1 - 863

ER -

The analysis of seu in nanowire fets and nanosheet fets

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this