The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C)

Youn Jin Lee; Kyung Min Lee; Jae Dam Hwang; Kil Sun No; Sunghwan Won; Junghyun Sok; Kyoungwan Park; Wan Shick Hong

The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C)

Youn Jin Lee, Kyung Min Lee, Jae Dam Hwang, Kil Sun No, Sunghwan Won, Junghyun Sok, Kyoungwan Park, Wan Shick Hong

University of Seoul

Research output: Contribution to conference › Paper › peer-review

Abstract

The Nanocrystalline silicon (nc-si) films indicated that field effect mobility and stability are better than amorphous silicon. We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. We fabricated the nc-si TFT as active layer.

Original language	English
Pages	1843-1844
Number of pages	2
State	Published - 2009
Event	16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 9 Dec 2009 → 11 Dec 2009

Conference

Conference	16th International Display Workshops, IDW '09
Country/Territory	Japan
City	Miyazaki
Period	9/12/09 → 11/12/09

Cite this

@conference{58389d1049f64617bded47a6a9a4dda7,

title = "The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C)",

abstract = "The Nanocrystalline silicon (nc-si) films indicated that field effect mobility and stability are better than amorphous silicon. We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. We fabricated the nc-si TFT as active layer.",

author = "Lee, {Youn Jin} and Lee, {Kyung Min} and Hwang, {Jae Dam} and No, {Kil Sun} and Sunghwan Won and Junghyun Sok and Kyoungwan Park and Hong, {Wan Shick}",

year = "2009",

language = "English",

pages = "1843--1844",

note = "16th International Display Workshops, IDW '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C). / Lee, Youn Jin; Lee, Kyung Min; Hwang, Jae Dam et al.
2009. 1843-1844 Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C)

AU - Lee, Youn Jin

AU - Lee, Kyung Min

AU - Hwang, Jae Dam

AU - No, Kil Sun

AU - Won, Sunghwan

AU - Sok, Junghyun

AU - Park, Kyoungwan

AU - Hong, Wan Shick

PY - 2009

Y1 - 2009

N2 - The Nanocrystalline silicon (nc-si) films indicated that field effect mobility and stability are better than amorphous silicon. We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. We fabricated the nc-si TFT as active layer.

AB - The Nanocrystalline silicon (nc-si) films indicated that field effect mobility and stability are better than amorphous silicon. We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. We fabricated the nc-si TFT as active layer.

UR - http://www.scopus.com/inward/record.url?scp=77954148881&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:77954148881

SP - 1843

EP - 1844

T2 - 16th International Display Workshops, IDW '09

Y2 - 9 December 2009 through 11 December 2009

ER -

The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C)

Abstract

Conference

Other files and links

Fingerprint

Cite this