The characteristics of bottom-gate thin film transistor adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature (< 200°C)

Youn Jin Lee, Kyung Min Lee, Jae Dam Hwang, Kil Sun No, Sunghwan Won, Junghyun Sok, Kyoungwan Park, Wan Shick Hong

Research output: Contribution to conference › Paper › peer-review

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