@inproceedings{461676dc600c4e9b995f685e3194364d,
title = "The characterization of bottom-gate thin film transistors adapted nanocrystalline silicon as active layer by catalytic CVD at low temperature",
abstract = "The nanocrystalline silicon bottom-gate thin film transistor (nc-si TFT) should improve on formed amorphous incubation layers at the onset of deposition because these layers deteriorate the performance of the transistor. We attempted modulation of hydrogen dilution ratio to achieve both the minimal incubation layer and high deposition rate. The incubation layer thickness was estimated by transmission electron microscopy (TEM) and crystallization fraction was measured by Raman spectroscopy.",
author = "Lee, {Youn Jin} and Lee, {Kyoung Min} and Hwang, {Jae Dam} and No, {Kil Sun} and Yoon, {Kap Soo} and Yang, {Sung Hoon} and Sunghwan Won and Junghyun Sok and Kyoungwan Park and Hong, {Wan Shick}",
year = "2009",
doi = "10.1149/1.3204414",
language = "English",
isbn = "9781566777407",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "3",
pages = "259--262",
booktitle = "ECS Transactions - Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009",
address = "United States",
edition = "3",
note = "Analytical Techniques for Semiconductor Materials and Process Characterization 6, ALTECH 2009 - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}