The compact modeling of channel potential in sub-30-nm NAND flash cell string

Myounggon Kang; Kyunghwan Lee; Dong Hyuk Chae; Byung Gook Park; Hyungcheol Shin

doi:10.1109/LED.2011.2179283

The compact modeling of channel potential in sub-30-nm NAND flash cell string

Myounggon Kang, Kyunghwan Lee, Dong Hyuk Chae, Byung Gook Park, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

This letter presents a compact model of nand Flash strings in which complex characteristics of scaled-down Flash cells can be captured very accurately through simple circuit simulation. Different from previous modeling studies, the proposed model has detailed physical descriptions for channel potential of Flash cell so that various program disturbances due to leakages in nand string can be easily analyzed. The compact model of channel potential is fully compatible with BSIM4 SPICE model. By applying compact model to the 30-nm nand product, many phenomena in the device were realized with more than 95% accuracy at the expense of only a few minutes.

Original language	English
Article number	6138278
Pages (from-to)	321-323
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	3
DOIs	https://doi.org/10.1109/LED.2011.2179283
State	Published - Mar 2012

Keywords

BSIM4
channel potential
drain-induced barrier lowering (DIBL)
gate-induced drain leakage (GIDL)
junction leakage
nand Flash
nand string

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10.1109/LED.2011.2179283

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abstract = "This letter presents a compact model of nand Flash strings in which complex characteristics of scaled-down Flash cells can be captured very accurately through simple circuit simulation. Different from previous modeling studies, the proposed model has detailed physical descriptions for channel potential of Flash cell so that various program disturbances due to leakages in nand string can be easily analyzed. The compact model of channel potential is fully compatible with BSIM4 SPICE model. By applying compact model to the 30-nm nand product, many phenomena in the device were realized with more than 95% accuracy at the expense of only a few minutes.",

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The compact modeling of channel potential in sub-30-nm NAND flash cell string

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