Abstract
Abstract: We used kinetic Monte Carlo (kMC) simulations to investigate the development over time of a non-classical crystallization system featuring many charged nanoparticles (CNPs) in the gas phase; we studied the abnormal growth of deposited silicon (Si) particles during chemical Si vapor deposition. We identified three parameters associated with abnormal growth of deposited CNPs. The kMC results revealed that abnormal, deposited CNP growth was accentuated when the CNP charge in the gas phase was balanced. In addition, a high CNP density (an elevated particle volume fraction) in the gas phase favored abnormal growth of deposited CNPs, as did a faster gas flow velocity, even when the charge signs of CNPs in the gas phase were not balanced. Graphic Abstract: [Figure not available: see fulltext.]
Original language | English |
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Pages (from-to) | 218-228 |
Number of pages | 11 |
Journal | Electronic Materials Letters |
Volume | 19 |
Issue number | 2 |
DOIs | |
State | Published - Mar 2023 |
Keywords
- Abnormal growth
- Charged nanoparticle
- Chemical vapor deposition
- Non-classical crystallization
- kMC simulation