The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

Cheng Tai Kuo, Karuppannan Balamurugan, Hung Wei Shiu, Hyun Ju Park, Soobin Sinn, Michael Neumann, Moonsup Han, Young Jun Chang, Chia Hao Chen, Hyeong Do Kim, Je Geun Park, Tae Won Noh

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.

Original languageEnglish
Pages (from-to)404-408
Number of pages5
JournalCurrent Applied Physics
Volume16
Issue number3
DOIs
StatePublished - Mar 2016

Keywords

  • Band offset
  • Exfoliation
  • Nickel phosphorous trisulfide
  • Photoemission spectroscopy
  • Zinc oxide

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