The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

Cheng Tai Kuo; Karuppannan Balamurugan; Hung Wei Shiu; Hyun Ju Park; Soobin Sinn; Michael Neumann; Moonsup Han; Young Jun Chang; Chia Hao Chen; Hyeong Do Kim; Je Geun Park; Tae Won Noh

doi:10.1016/j.cap.2016.01.001

The energy band alignment at the interface between mechanically exfoliated few-layer NiPS₃ nanosheets and ZnO

Cheng Tai Kuo, Karuppannan Balamurugan, Hung Wei Shiu, Hyun Ju Park, Soobin Sinn, Michael Neumann, Moonsup Han, Young Jun Chang, Chia Hao Chen, Hyeong Do Kim, Je Geun Park, Tae Won Noh

Department of Physics

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS₃ van der Waals crystals on ZnO/Nb:SrTiO₃ substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS₃ on Nb:SrTiO₃ and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS₃/ZnO interface. The valence band offset (VBO) of few-layer NiPS₃/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS₃ thickness, suggesting electronic coupling or charge transfer at the NiPS₃/ZnO interface.

Original language	English
Pages (from-to)	404-408
Number of pages	5
Journal	Current Applied Physics
Volume	16
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2016.01.001
State	Published - Mar 2016

Keywords

Band offset
Exfoliation
Nickel phosphorous trisulfide
Photoemission spectroscopy
Zinc oxide

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10.1016/j.cap.2016.01.001

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title = "The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO",

abstract = "We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.",

keywords = "Band offset, Exfoliation, Nickel phosphorous trisulfide, Photoemission spectroscopy, Zinc oxide",

author = "Kuo, \{Cheng Tai\} and Karuppannan Balamurugan and Shiu, \{Hung Wei\} and Park, \{Hyun Ju\} and Soobin Sinn and Michael Neumann and Moonsup Han and Chang, \{Young Jun\} and Chen, \{Chia Hao\} and Kim, \{Hyeong Do\} and Park, \{Je Geun\} and Noh, \{Tae Won\}",

year = "2016",

month = mar,

doi = "10.1016/j.cap.2016.01.001",

language = "English",

volume = "16",

pages = "404--408",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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T1 - The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

AU - Kuo, Cheng Tai

AU - Balamurugan, Karuppannan

AU - Shiu, Hung Wei

AU - Park, Hyun Ju

AU - Sinn, Soobin

AU - Neumann, Michael

AU - Han, Moonsup

AU - Chang, Young Jun

AU - Chen, Chia Hao

AU - Kim, Hyeong Do

AU - Park, Je Geun

AU - Noh, Tae Won

PY - 2016/3

Y1 - 2016/3

N2 - We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.

AB - We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.

KW - Band offset

KW - Exfoliation

KW - Nickel phosphorous trisulfide

KW - Photoemission spectroscopy

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/84954411768

U2 - 10.1016/j.cap.2016.01.001

DO - 10.1016/j.cap.2016.01.001

M3 - Article

AN - SCOPUS:84954411768

SN - 1567-1739

VL - 16

SP - 404

EP - 408

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

The energy band alignment at the interface between mechanically exfoliated few-layer NiPS₃ nanosheets and ZnO

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Keywords

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