The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

Cheng Tai Kuo; Karuppannan Balamurugan; Hung Wei Shiu; Hyun Ju Park; Soobin Sinn; Michael Neumann; Moonsup Han; Young Jun Chang; Chia Hao Chen; Hyeong Do Kim; Je Geun Park; Tae Won Noh

doi:10.1016/j.cap.2016.01.001

The energy band alignment at the interface between mechanically exfoliated few-layer NiPS₃ nanosheets and ZnO

Cheng Tai Kuo
, Karuppannan Balamurugan
, Hung Wei Shiu
, Hyun Ju Park
, Soobin Sinn
, Michael Neumann
, Moonsup Han
, Young Jun Chang
, Chia Hao Chen
, Hyeong Do Kim
, Je Geun Park
, Tae Won Noh

Department of Physics

Institute for Basic Science
Seoul National University
National Synchrotron Radiation Research Center Taiwan

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS₃ van der Waals crystals on ZnO/Nb:SrTiO₃ substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS₃ on Nb:SrTiO₃ and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS₃/ZnO interface. The valence band offset (VBO) of few-layer NiPS₃/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS₃ thickness, suggesting electronic coupling or charge transfer at the NiPS₃/ZnO interface.

Original language	English
Pages (from-to)	404-408
Number of pages	5
Journal	Current Applied Physics
Volume	16
Issue number	3
DOIs	https://doi.org/10.1016/j.cap.2016.01.001
State	Published - Mar 2016

Keywords

Band offset
Exfoliation
Nickel phosphorous trisulfide
Photoemission spectroscopy
Zinc oxide

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10.1016/j.cap.2016.01.001

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title = "The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO",

abstract = "We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.",

keywords = "Band offset, Exfoliation, Nickel phosphorous trisulfide, Photoemission spectroscopy, Zinc oxide",

author = "Kuo, \{Cheng Tai\} and Karuppannan Balamurugan and Shiu, \{Hung Wei\} and Park, \{Hyun Ju\} and Soobin Sinn and Michael Neumann and Moonsup Han and Chang, \{Young Jun\} and Chen, \{Chia Hao\} and Kim, \{Hyeong Do\} and Park, \{Je Geun\} and Noh, \{Tae Won\}",

year = "2016",

month = mar,

doi = "10.1016/j.cap.2016.01.001",

language = "English",

volume = "16",

pages = "404--408",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

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T1 - The energy band alignment at the interface between mechanically exfoliated few-layer NiPS3 nanosheets and ZnO

AU - Kuo, Cheng Tai

AU - Balamurugan, Karuppannan

AU - Shiu, Hung Wei

AU - Park, Hyun Ju

AU - Sinn, Soobin

AU - Neumann, Michael

AU - Han, Moonsup

AU - Chang, Young Jun

AU - Chen, Chia Hao

AU - Kim, Hyeong Do

AU - Park, Je Geun

AU - Noh, Tae Won

PY - 2016/3

Y1 - 2016/3

N2 - We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.

AB - We have studied the electronic structure and interfacial properties of mechanically exfoliated few-layer NiPS3 van der Waals crystals on ZnO/Nb:SrTiO3 substrates using scanning photoelectron microscopy and spectroscopy. The conducting ZnO layer enhances the visibility of few-layer NiPS3 on Nb:SrTiO3 and prevents charging effects in photoemission. We experimentally determined a type-II band alignment at the NiPS3/ZnO interface. The valence band offset (VBO) of few-layer NiPS3/ZnO is 2.8 ± 0.09 eV, and the conduction band offset is 1.0 ± 0.09 eV. Moreover, we found an increase of ∼0.3 eV in VBO as decreasing NiPS3 thickness, suggesting electronic coupling or charge transfer at the NiPS3/ZnO interface.

KW - Band offset

KW - Exfoliation

KW - Nickel phosphorous trisulfide

KW - Photoemission spectroscopy

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/84954411768

U2 - 10.1016/j.cap.2016.01.001

DO - 10.1016/j.cap.2016.01.001

M3 - Article

AN - SCOPUS:84954411768

SN - 1567-1739

VL - 16

SP - 404

EP - 408

JO - Current Applied Physics

JF - Current Applied Physics

IS - 3

ER -

The energy band alignment at the interface between mechanically exfoliated few-layer NiPS₃ nanosheets and ZnO

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Keywords

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