The hysteresis characteristics of low temperature (≤200°C) silicon nanocrystals embedded in silicon-rich silicon nitride films

Kyoung Min Lee, Jae Dam Hwang, Ki Su Keum, Kil Sun No, Wan Shick Hong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The electrical properties of silicon nanocrystals (Si NCs) embedded in silicon-rich silicon nitride (SRSN) films were investigated by fabricating metal-insulator-semiconductor capacitor structures to utilize the Si NCs as charge storage nodes. The Si NCs embedded in SRSN films were prepared by catalytic chemical vapor deposition technique at substrate temperatures below 200°C. The counterclockwise hysteresis loops were observed in capacitance-voltage (C-V) characteristics. A memory window of 13 V was observed in the sweep voltage range of ±12 V.

Original languageEnglish
Title of host publicationNanocrystal Embedded Dielectrics for Electronic and Photonic Devices
Pages47-52
Number of pages6
Edition18
DOIs
StatePublished - 2011
EventNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number18
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceNanocrystal Embedded Dielectrics for Electronic and Photonic Devices - 219th ECS Meeting
Country/TerritoryCanada
CityMontreal, QC
Period1/05/116/05/11

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