The novel SCR-based ESD protection with low triggering and high holding voltages

Myounggon Kang; Ki Whan Song; Byung Gook Park; Hyungcheol Shin

doi:10.1016/j.mejo.2011.04.009

The novel SCR-based ESD protection with low triggering and high holding voltages

Myounggon Kang, Ki Whan Song, Byung Gook Park, Hyungcheol Shin

School of Advanced Fusion Studies

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm.

Original language	English
Pages (from-to)	837-839
Number of pages	3
Journal	Microelectronics Journal
Volume	42
Issue number	6
DOIs	https://doi.org/10.1016/j.mejo.2011.04.009
State	Published - Jun 2011

Keywords

Breakdown current
Discharge electrostatic discharge (ESD)
Holding voltage
Silicon controlled rectifier (SCR)
Triggering voltage

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10.1016/j.mejo.2011.04.009

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@article{18cad45e4f1841db9b30a4615d712687,

title = "The novel SCR-based ESD protection with low triggering and high holding voltages",

abstract = "This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm.",

keywords = "Breakdown current, Discharge electrostatic discharge (ESD), Holding voltage, Silicon controlled rectifier (SCR), Triggering voltage",

author = "Myounggon Kang and Song, {Ki Whan} and Park, {Byung Gook} and Hyungcheol Shin",

year = "2011",

month = jun,

doi = "10.1016/j.mejo.2011.04.009",

language = "English",

volume = "42",

pages = "837--839",

journal = "Microelectronics Journal",

issn = "0026-2692",

publisher = "Elsevier Ltd.",

number = "6",

}

TY - JOUR

T1 - The novel SCR-based ESD protection with low triggering and high holding voltages

AU - Kang, Myounggon

AU - Song, Ki Whan

AU - Park, Byung Gook

AU - Shin, Hyungcheol

PY - 2011/6

Y1 - 2011/6

N2 - This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm.

AB - This paper introduces a novel silicon controlled rectifier (SCR)-based circuit. The proposed device using 70 nm DRAM process obtained the high holding and low triggering voltages by using variable IR drop. These characteristics enable to discharge electrostatic discharge (ESD) current and ensure latch-up immunity for normal operations. Also, the proposed scheme is easily implemented through the modification of the metal connection compare to the conventional SCR-based device. We investigated electrical characteristics by both measurements and TCAD simulations. Measurement results showed the proposed SCR had triggering voltage of 6.2 V, holding voltage of 3.3 V, and the second breakdown current of 58 mA/μm.

KW - Breakdown current

KW - Discharge electrostatic discharge (ESD)

KW - Holding voltage

KW - Silicon controlled rectifier (SCR)

KW - Triggering voltage

UR - http://www.scopus.com/inward/record.url?scp=79956340681&partnerID=8YFLogxK

U2 - 10.1016/j.mejo.2011.04.009

DO - 10.1016/j.mejo.2011.04.009

M3 - Article

AN - SCOPUS:79956340681

SN - 0026-2692

VL - 42

SP - 837

EP - 839

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 6

ER -

The novel SCR-based ESD protection with low triggering and high holding voltages

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Keywords

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