The stabilizing effects of PMMA passivation on solution-processed indium-zinc oxide thin-film transistors

Kwan Jun Heo; Ju Song Eom; Hyeonah Jo; Seong Gon Choi; Byung Jun Jung; Sung Jin Kim

doi:10.3365/KJMM.2016.54.4.270

The stabilizing effects of PMMA passivation on solution-processed indium-zinc oxide thin-film transistors

Kwan Jun Heo, Ju Song Eom, Hyeonah Jo, Seong Gon Choi, Byung Jun Jung, Sung Jin Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZOTFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.

Original language	English
Pages (from-to)	270-274
Number of pages	5
Journal	Journal of Korean Institute of Metals and Materials
Volume	54
Issue number	4
DOIs	https://doi.org/10.3365/KJMM.2016.54.4.270
State	Published - Apr 2016

Keywords

Electrical
Electrical properties
Indium zinc oxide thin film transictors(TFTs)
Sol-gel
Thin films

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10.3365/KJMM.2016.54.4.270

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title = "The stabilizing effects of PMMA passivation on solution-processed indium-zinc oxide thin-film transistors",

abstract = "We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZOTFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.",

keywords = "Electrical, Electrical properties, Indium zinc oxide thin film transictors(TFTs), Sol-gel, Thin films",

author = "Heo, {Kwan Jun} and Eom, {Ju Song} and Hyeonah Jo and Choi, {Seong Gon} and Jung, {Byung Jun} and Kim, {Sung Jin}",

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year = "2016",

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doi = "10.3365/KJMM.2016.54.4.270",

language = "English",

volume = "54",

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T1 - The stabilizing effects of PMMA passivation on solution-processed indium-zinc oxide thin-film transistors

AU - Heo, Kwan Jun

AU - Eom, Ju Song

AU - Jo, Hyeonah

AU - Choi, Seong Gon

AU - Jung, Byung Jun

AU - Kim, Sung Jin

PY - 2016/4

Y1 - 2016/4

N2 - We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZOTFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.

AB - We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZOTFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.

KW - Electrical

KW - Electrical properties

KW - Indium zinc oxide thin film transictors(TFTs)

KW - Sol-gel

KW - Thin films

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M3 - Article

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SN - 1738-8228

VL - 54

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EP - 274

JO - Journal of Korean Institute of Metals and Materials

JF - Journal of Korean Institute of Metals and Materials

IS - 4

ER -

The stabilizing effects of PMMA passivation on solution-processed indium-zinc oxide thin-film transistors

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