Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

Seoung Hwan Park, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

Abstract

Electronic and optical properties of wurtzite (WZ) nonpoalr a-plane InxGa1−xN/GaN quantum wire (QWR) structures are investigated as a function of the In content and the QWR size. In the c-plane, the spontaneous emission peak exhibits a slight dependence on the In content, while in the a-plane, the peak intensity significantly increases as the In content rises from 0.2 to 0.3. This is mainly due to the carrier confinement effect in QWRs with a higher In content. Spontaneous emission peaks of a-plane are shown to be much larger than those of c-plane irrespective of the In content, in particular, for x≥0.3. Also, the a-plane shows much larger peak intensity than the c-plane, irrespective of the QWR size. We expect that nonpolar a-plane QWRs are attractive for optoelectronic device applications with high internal efficiency.

Original languageEnglish
Article number115706
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume150
DOIs
StatePublished - Jun 2023

Keywords

  • Built-in potential
  • GaN
  • InGaN
  • Quantum wire
  • Strain

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