Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

Seoung Hwan Park; Doyeol Ahn

doi:10.1016/j.physe.2023.115706

Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Electronic and optical properties of wurtzite (WZ) nonpoalr a-plane In_xGa_1−xN/GaN quantum wire (QWR) structures are investigated as a function of the In content and the QWR size. In the c-plane, the spontaneous emission peak exhibits a slight dependence on the In content, while in the a-plane, the peak intensity significantly increases as the In content rises from 0.2 to 0.3. This is mainly due to the carrier confinement effect in QWRs with a higher In content. Spontaneous emission peaks of a-plane are shown to be much larger than those of c-plane irrespective of the In content, in particular, for x≥0.3. Also, the a-plane shows much larger peak intensity than the c-plane, irrespective of the QWR size. We expect that nonpolar a-plane QWRs are attractive for optoelectronic device applications with high internal efficiency.

Original language	English
Article number	115706
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	150
DOIs	https://doi.org/10.1016/j.physe.2023.115706
State	Published - Jun 2023

Keywords

Built-in potential
GaN
InGaN
Quantum wire
Strain

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title = "Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires",

abstract = "Electronic and optical properties of wurtzite (WZ) nonpoalr a-plane InxGa1−xN/GaN quantum wire (QWR) structures are investigated as a function of the In content and the QWR size. In the c-plane, the spontaneous emission peak exhibits a slight dependence on the In content, while in the a-plane, the peak intensity significantly increases as the In content rises from 0.2 to 0.3. This is mainly due to the carrier confinement effect in QWRs with a higher In content. Spontaneous emission peaks of a-plane are shown to be much larger than those of c-plane irrespective of the In content, in particular, for x≥0.3. Also, the a-plane shows much larger peak intensity than the c-plane, irrespective of the QWR size. We expect that nonpolar a-plane QWRs are attractive for optoelectronic device applications with high internal efficiency.",

keywords = "Built-in potential, GaN, InGaN, Quantum wire, Strain",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

note = "Publisher Copyright: {\textcopyright} 2023 Elsevier B.V.",

year = "2023",

month = jun,

doi = "10.1016/j.physe.2023.115706",

language = "English",

volume = "150",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

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publisher = "Elsevier B.V.",

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T1 - Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 2023/6

Y1 - 2023/6

N2 - Electronic and optical properties of wurtzite (WZ) nonpoalr a-plane InxGa1−xN/GaN quantum wire (QWR) structures are investigated as a function of the In content and the QWR size. In the c-plane, the spontaneous emission peak exhibits a slight dependence on the In content, while in the a-plane, the peak intensity significantly increases as the In content rises from 0.2 to 0.3. This is mainly due to the carrier confinement effect in QWRs with a higher In content. Spontaneous emission peaks of a-plane are shown to be much larger than those of c-plane irrespective of the In content, in particular, for x≥0.3. Also, the a-plane shows much larger peak intensity than the c-plane, irrespective of the QWR size. We expect that nonpolar a-plane QWRs are attractive for optoelectronic device applications with high internal efficiency.

AB - Electronic and optical properties of wurtzite (WZ) nonpoalr a-plane InxGa1−xN/GaN quantum wire (QWR) structures are investigated as a function of the In content and the QWR size. In the c-plane, the spontaneous emission peak exhibits a slight dependence on the In content, while in the a-plane, the peak intensity significantly increases as the In content rises from 0.2 to 0.3. This is mainly due to the carrier confinement effect in QWRs with a higher In content. Spontaneous emission peaks of a-plane are shown to be much larger than those of c-plane irrespective of the In content, in particular, for x≥0.3. Also, the a-plane shows much larger peak intensity than the c-plane, irrespective of the QWR size. We expect that nonpolar a-plane QWRs are attractive for optoelectronic device applications with high internal efficiency.

KW - Built-in potential

KW - GaN

KW - InGaN

KW - Quantum wire

KW - Strain

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U2 - 10.1016/j.physe.2023.115706

DO - 10.1016/j.physe.2023.115706

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SN - 1386-9477

VL - 150

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

M1 - 115706

ER -

Theoretical studies on electronic and optical properties of non-polar wurtzite InGaN/GaN quantum wires

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Keywords

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