Theoretical studies on intervalley splittings in Si/SiO 2 quantum dot structures

S. H. Park, D. Ahn

Research output: Contribution to journalArticlepeer-review


Intervalley splittings of pyramidal and cubic Si/SiO 2 quantum dot(QD) are investigated using multi-valley effective theory. The cubic QD with a length of 100 Å shows the valley splitting of about 0.21 meV at zero electric field. This value is comparable to 0.18 meV reported for the rectangular Si/SiGe QD with the size of 250 × 200 × 100 Å 3. The valley splittings of QD increase with increasing electric field, which can be explained by the increase in the energy difference between symmetric and antisymmetric states. The pyramidal QD shows larger valley splittings than those of the cubic QD with a same size because the cubic QD has larger volume than the pyramidal QD for a given length.

Original languageEnglish
Article number29
JournalEuropean Physical Journal B
Issue number1
StatePublished - Jan 2012


  • Mesoscopic and Nanoscale Systems


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