Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

Seoung Hwan Park; Doyeol Ahn

doi:10.1109/LPT.2016.2585497

Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

Seoung Hwan Park, Doyeol Ahn

School of Electrical and Computer Engineering

Catholic University of Daegu

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The transverse-magnetic (TM) light emission characteristics of ultraviolet B_xAl_yGa_1-x-yN/AlN quantum well (QW) structures with several different Al contents (x = 0.7-0.9) were theoretically investigated using the multiband effective-mass theory. The TM-polarized spontaneous emission peak of BAlGaN/AlN QW structures is found to be significantly enhanced with the inclusion of the boron. In particular, in the case of the QW structure with a relatively low Al content (y=0.7), the light intensity is about three times larger than for the conventional QW structure. This can be explained by the decrease in the internal field, in addition to the change of the characteristics of the topmost valence subband.

Original language	English
Article number	7501490
Pages (from-to)	2153-2155
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	28
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2016.2585497
State	Published - 15 Oct 2016

Keywords

AlN
BAlGaN
TM mode
quantum well
ultraviolet

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10.1109/LPT.2016.2585497

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title = "Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices",

abstract = "The transverse-magnetic (TM) light emission characteristics of ultraviolet BxAlyGa1-x-yN/AlN quantum well (QW) structures with several different Al contents (x = 0.7-0.9) were theoretically investigated using the multiband effective-mass theory. The TM-polarized spontaneous emission peak of BAlGaN/AlN QW structures is found to be significantly enhanced with the inclusion of the boron. In particular, in the case of the QW structure with a relatively low Al content (y=0.7), the light intensity is about three times larger than for the conventional QW structure. This can be explained by the decrease in the internal field, in addition to the change of the characteristics of the topmost valence subband.",

keywords = "AlN, BAlGaN, TM mode, quantum well, ultraviolet",

author = "Park, {Seoung Hwan} and Doyeol Ahn",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.",

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doi = "10.1109/LPT.2016.2585497",

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T1 - Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

AU - Park, Seoung Hwan

AU - Ahn, Doyeol

PY - 2016/10/15

Y1 - 2016/10/15

N2 - The transverse-magnetic (TM) light emission characteristics of ultraviolet BxAlyGa1-x-yN/AlN quantum well (QW) structures with several different Al contents (x = 0.7-0.9) were theoretically investigated using the multiband effective-mass theory. The TM-polarized spontaneous emission peak of BAlGaN/AlN QW structures is found to be significantly enhanced with the inclusion of the boron. In particular, in the case of the QW structure with a relatively low Al content (y=0.7), the light intensity is about three times larger than for the conventional QW structure. This can be explained by the decrease in the internal field, in addition to the change of the characteristics of the topmost valence subband.

AB - The transverse-magnetic (TM) light emission characteristics of ultraviolet BxAlyGa1-x-yN/AlN quantum well (QW) structures with several different Al contents (x = 0.7-0.9) were theoretically investigated using the multiband effective-mass theory. The TM-polarized spontaneous emission peak of BAlGaN/AlN QW structures is found to be significantly enhanced with the inclusion of the boron. In particular, in the case of the QW structure with a relatively low Al content (y=0.7), the light intensity is about three times larger than for the conventional QW structure. This can be explained by the decrease in the internal field, in addition to the change of the characteristics of the topmost valence subband.

KW - AlN

KW - BAlGaN

KW - TM mode

KW - quantum well

KW - ultraviolet

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M3 - Article

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EP - 2155

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

Theoretical Studies on TM-Polarized Light Emission for Ultraviolet BAlGaN/AlN Optoelectronic Devices

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