Abstract
Light emission characteristics of non-polar ultraviolet (UV) B x Al y Ga 1−x−y N/AlN quantum well (QW) structures lattice-matched to AlN substrate were theoretically investigated using the multiband effective-mass theory. The peak intensity of the non-polar BAlGaN/AlN QW structure lattice-matched to AlN is found to be much larger than that of the c-plane BAlGaN/BAlGaN QW structure lattice-matched to AlN. Also, the lattice-matched BAlGaN/AlN QW structure shows a large polarization ratio and its value changes from 0.7 to 0.9 in an investigated range of carrier density. We expect that non-polar BAlGaN/BAlGaN QW structures lattice-matched to AlN could be used as a UV light source with a higher crystal quality.
Original language | English |
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Pages (from-to) | 67-69 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 290 |
DOIs | |
State | Published - Mar 2019 |