Theoretical study of strained InGaP quantum-well lasers

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The effects of biaxial compressive and tensile strains on the optical gain and threshold current density of 70 Å strained InGaP-In(AlGa)P quantum-well lasers are studied theoretically. Due to strain effects on the density of states and optical dipole matrix elements, compressive strain produces the largest gain (TE) for carrier density N<5×1018 cm-3 while the TM mode gain of a tensile strained quantum well is the largest when N>5×1018 cm-3. Calculated threshold current densities of compressive- and tensile-strained quantum wells are both lower than unstrained case. For cavity length longer than 500 μm, a quantum well with compressive strain has the lowest threshold current density. In this case, calculated threshold density shows reasonable agreement with the experiment.

Original languageEnglish
Pages (from-to)628
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995


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