## Abstract

The effects of biaxial compressive and tensile strains on the optical gain and threshold current density of 70 Å strained InGaP-In(AlGa)P quantum-well lasers are studied theoretically. Due to strain effects on the density of states and optical dipole matrix elements, compressive strain produces the largest gain (TE) for carrier density N<5×10^{18} cm^{-3} while the TM mode gain of a tensile strained quantum well is the largest when N>5×10^{18} cm^{-3}. Calculated threshold current densities of compressive- and tensile-strained quantum wells are both lower than unstrained case. For cavity length longer than 500 μm, a quantum well with compressive strain has the lowest threshold current density. In this case, calculated threshold density shows reasonable agreement with the experiment.

Original language | English |
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Pages (from-to) | 628 |

Number of pages | 1 |

Journal | Applied Physics Letters |

DOIs | |

State | Published - 1995 |