@inproceedings{b3db7f61b7d44208ae6db2328c874beb,
title = "Thermal and adhesive properties of Cu interconnect deposited by electroless plating",
abstract = "In the present study, the adhesion and thermal properties of the electroless-deposited Cu thin film were investigated. The multilayered structure of Cu/TaN/Si was fabricated by electroless-depositing the Cu thin layer on the TaN diffusion barrier which was deposited by MOCVD on the Si substrate. Crystallization and agglomeration of the electroless-deposited Cu film occurred through annealing in H2 atmosphere and resulted in a decrease of film resistance. Thermal stability of Cu/TaN/Si system was maintained up to the annealing temperature of 600°C in H2 atmosphere above which the intermediate compound of Cu-Si was formed through diffusion into the TaN layer. The adhesion of the electroless-deposited Cu film was compared with other deposition methods of thermal evaporation and sputtering. The scratch test showed that the adhesion of electroless plated Cu film on TaN was better than those of sputtered Cu film and evaporated Cu film.",
author = "Kim, {J. S.}",
note = "Publisher Copyright: {\textcopyright} 2001 IEEE.; 3rd International Symposium on Electronic Materials and Packaging, EMAP 2001 ; Conference date: 19-11-2001 Through 22-11-2001",
year = "2001",
doi = "10.1109/EMAP.2001.983980",
language = "English",
series = "Advances in Electronic Materials and Packaging 2001",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "182--184",
editor = "S.B. Lee and K.W. Paik",
booktitle = "Advances in Electronic Materials and Packaging 2001",
address = "United States",
}