Abstract
Thermodynamic calculations of the equilibrium compositions of condensed- and gaseous-reaction products from the reaction between Cu(s) and Cl 2 (g) has been performed to understand the fundamental reactions during the Cl-based dry etching of Cu thin film. Total pressure was fixed at 5mTorr, which is typical for high-density plasma etching. The final phase equilibrium state of Cu(s)-Cl 2 (g) system was determined by using the minimization of the total free energy of the system as a function of temperature and initial Cl 2 (g)/Cu(s) molar ratio, and the calculated phase equilibrium results were discussed in relation to the Cl-based Cu dry etch reaction.
Original language | English |
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Pages (from-to) | 158-168 |
Number of pages | 11 |
Journal | Applied Surface Science |
Volume | 207 |
Issue number | 1-4 |
DOIs | |
State | Published - 28 Feb 2003 |
Keywords
- Chlorine
- Cu
- Equilibrium
- Phase
- Reaction