Abstract
We report the high thermoelectric figure-of-merit (ZT) on the Se-deficient polycrystalline compounds of In4Se3-x (0.02≤x≤0.5) and the anisotropic electronic band structure. The Se-deficiency (x) has the effect of decreasing the semiconducting band gap and increasing the power factor. The band structure calculation for In4 Se3-x (x=0.25) exhibits localized hole bands at the Γ-point and Y-S symmetry line, whereas the significant electronic band dispersion is observed along the c-axis. Here, we propose that the high ZT values on those compounds are originated from the anisotropic electronic band structure as well as Peierls distortion.
Original language | English |
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Article number | 212106 |
Journal | Applied Physics Letters |
Volume | 95 |
Issue number | 21 |
DOIs | |
State | Published - 2009 |