Thermoelectric transport properties of S-doped In0.9Si0.1Se

Dong Ho Kim, Hyun Sik Kim, Jamil Ur Rahman, Weon Ho Shin, Tae Wan Kim, Sang il Kim

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Layered metal chalcogenides with highly promising thermoelectric properties have attracted attention owing to their intrinsically low thermal conductivity, which originates from their unique layered structure and van der Waals bonding. InSe, a post-transition metal chalcogenide, also has layered atomic structure and low thermal conductivity. We investigate the effects of S doping of Si-doped InSe, In0.9Si0.1Se. The S-doped In0.9Si0.1Se exhibits enhanced thermoelectric properties, with a higher power factor and lower thermal conductivity compared to Si-doped InSe. A significant increase in carrier mobility has an overall positive effect on the electronic transport properties, resulting in a systematic increase in power factor from 0.05 to 0.15 mW/mK2 with S doping. In addition, the thermal conductivity systematically decreases with S doping owing to additional point-defect scattering. Because of the higher power factor and lower thermal conductivity, the thermoelectric figure of merit of the In0.9Si0.1Se0.9S0.1 sample at 735 K was 0.18, which is 3.6 times that of In0.9Si0.1Se.

Original languageEnglish
Pages (from-to)64-69
Number of pages6
JournalJournal of the Korean Ceramic Society
Volume59
Issue number1
DOIs
StatePublished - Jan 2022

Keywords

  • Anion doping
  • Metal chalcogenides
  • Thermoelectric

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