Thick amorphous silicon layers suitable for the realization of radiation detectors

W. S. Hong, V. Petrova-Koch, J. Drewery, T. Jing, H. Lee, V. Perez Mendez

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


Thick silicon films with good electronic quality have been prepared by glow discharge of He-diluted SiH4 at a substrate temperature approx. 150°C and subsequent annealing at 160°C for about 100 hours. The stress in the films obtained this way decreased to approx. 100 MPa compared to the 350 MPa in conventional a-Si:H. The post-annealing helped to reduce the ionized dangling bond density from 2.5 × 1015 cm-3 to 7 × 1014 cm-3 without changing the internal stress. IR spectroscopy and hydrogen effusion measurements implied the existence of microvoids and tiny crystallites in the material showing satisfactory electronic properties. P-I-N diodes for radiation detection applications have been realized out of the new material.

Original languageEnglish
Pages (from-to)773-778
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
StatePublished - 1995
EventProceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA
Duration: 18 Apr 199521 Apr 1995


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