Abstract
Various critical issues related with 3-D stacked nand Flash memory are examined in this paper. Our single-crystalline STacked ARray (STAR) has many advantages such as better scalability, possibility of single-crystal channel, less sensitivity to 3-D interference, stable virtual source/drain characteristic, and more extendability over other stacked structures. With STAR, we proposed a unit 3-D structure, i.e., "building". Then, using this new component, 3-D block and full chip architecture are successfully designed. For the first time, the structure and operation methods of the "full" array are considered. The fully designed 3-D nand Flash architecture will be the novel solution of reliable 3-D stacked nand Flash memory for terabit density.
Original language | English |
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Article number | 6062401 |
Pages (from-to) | 35-45 |
Number of pages | 11 |
Journal | IEEE Transactions on Electron Devices |
Volume | 59 |
Issue number | 1 |
DOIs | |
State | Published - Jan 2012 |
Keywords
- 3-D block
- 3-D memory
- 3-D stacked nand Flash memory
- Channel-channel (Ch-Ch) coupling
- single-crystalline STacked ARray (STAR)