Abstract
Various critical issues related with 3-D stacked nand Flash memory are examined in this paper. Our single-crystalline STacked ARray (STAR) has many advantages such as better scalability, possibility of single-crystal channel, less sensitivity to 3-D interference, stable virtual source/drain characteristic, and more extendability over other stacked structures. With STAR, we proposed a unit 3-D structure, i.e., "building". Then, using this new component, 3-D block and full chip architecture are successfully designed. For the first time, the structure and operation methods of the "full" array are considered. The fully designed 3-D nand Flash architecture will be the novel solution of reliable 3-D stacked nand Flash memory for terabit density.
| Original language | English |
|---|---|
| Article number | 6062401 |
| Pages (from-to) | 35-45 |
| Number of pages | 11 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 59 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 2012 |
Keywords
- 3-D block
- 3-D memory
- 3-D stacked nand Flash memory
- Channel-channel (Ch-Ch) coupling
- single-crystalline STacked ARray (STAR)