Top-gate field-effect transistor based on monolayer WS2with an ion-gel gate dielectric

Dae Hyun Jung, Guen Hyung Oh, Sang Il Kim, Taewan Kim

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3 Scopus citations


A top-gate field-effect transistor (FET), based on monolayer (ML) tungsten disulfide (WS2), and with an ion-gel dielectric was developed. The high electrical contact resistance of the Schottky contacts at the n-type transition metal dichalcogenides/metal electrode interfaces often adversely affects the device performance. We report the contact resistance and Schottky barrier height of an FET with Au electrodes. The FET is based on ML WS2 that was synthesized using chemical vapour deposition and was assessed using the transfer-length method and low-temperature measurements. Raman and photoluminescence spectra were recorded to determine the optical properties of the WS2 layers. The ML WS2 FET with an ion-gel top gate dielectric exhibits n-type behaviour, with a mobility, on/off ratio of 1.97 cm2 V-1·s-1, 1.51 × 105, respectively.

Original languageEnglish
Article number034001
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number3
StatePublished - Mar 2022


  • Contact resistance
  • Schottky barrier heights
  • field-effect transistor
  • ion gel
  • transition-metal dichalcogenides
  • tungsten disulfide


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