Transferable graphene oxide by stamping nanotechnology: Electron-transport layer for efficient bulk-heterojunction solar cells

Dong Hwan Wang; Jung Kyu Kim; Jung Hwa Seo; Insun Park; Byung Hee Hong; Jong Hyeok Park; Alan J. Heeger

doi:10.1002/anie.201209999

Transferable graphene oxide by stamping nanotechnology: Electron-transport layer for efficient bulk-heterojunction solar cells

Dong Hwan Wang
, Jung Kyu Kim
, Jung Hwa Seo
, Insun Park
, Byung Hee Hong
, Jong Hyeok Park
, Alan J. Heeger

Department of Physics

Research output: Contribution to journal › Article › peer-review

131 Scopus citations

Abstract

Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.

Original language	English
Pages (from-to)	2874-2880
Number of pages	7
Journal	Angewandte Chemie - International Edition
Volume	52
Issue number	10
DOIs	https://doi.org/10.1002/anie.201209999
State	Published - 4 Mar 2013

Keywords

electron transport
graphene oxide
nanotechnology
solar cells
stamping transfer

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10.1002/anie.201209999

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abstract = "Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.",

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AU - Wang, Dong Hwan

AU - Kim, Jung Kyu

AU - Seo, Jung Hwa

AU - Park, Insun

AU - Hong, Byung Hee

AU - Park, Jong Hyeok

AU - Heeger, Alan J.

PY - 2013/3/4

Y1 - 2013/3/4

N2 - Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.

AB - Layer by layer: Electron-transport layers (ETLs) of transferable graphene oxide (GO) inserted by using a stamping nanotechnology (see picture) result in bulk-heterojunction (BHJ) solar cells with enhanced power conversion efficiency because of enhanced electron-charge transport and reduced electronic charge barrier with low series resistance. The GO ETL also increases the stability of the device in air.

KW - electron transport

KW - graphene oxide

KW - nanotechnology

KW - solar cells

KW - stamping transfer

UR - https://www.scopus.com/pages/publications/84874624616

U2 - 10.1002/anie.201209999

DO - 10.1002/anie.201209999

M3 - Article

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Transferable graphene oxide by stamping nanotechnology: Electron-transport layer for efficient bulk-heterojunction solar cells

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Keywords

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