Transient velocity overshoot dynamics in GaAs for electric fields ≤ 200 kV/cm

J. Son; W. Sha; J. Kim; T. B. Norris; J. F. Whitaker; G. A. Mourou

doi:10.1063/1.109846

Transient velocity overshoot dynamics in GaAs for electric fields ≤ 200 kV/cm

J. Son, W. Sha, J. Kim, T. B. Norris, J. F. Whitaker, G. A. Mourou

Department of Physics

University of Michigan, Ann Arbor

Research output: Contribution to journal › Article › peer-review

39 Scopus citations

Abstract

We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired, respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the degree of overshoot was maximized for an electric field on the GaAs between 40 and 50 kV/cm when 1.44-eV photons in an 80-fs laser pulse excited the sample. For carriers excited with higher initial energy (1.55 eV), the degree of overshoot decreased and the maximum degree of overshoot occurred at a higher electric field.

Original language	English
Pages (from-to)	923-925
Number of pages	3
Journal	Applied Physics Letters
Volume	63
Issue number	7
DOIs	https://doi.org/10.1063/1.109846
State	Published - 1993

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abstract = "We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired, respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the degree of overshoot was maximized for an electric field on the GaAs between 40 and 50 kV/cm when 1.44-eV photons in an 80-fs laser pulse excited the sample. For carriers excited with higher initial energy (1.55 eV), the degree of overshoot decreased and the maximum degree of overshoot occurred at a higher electric field.",

author = "J. Son and W. Sha and J. Kim and Norris, {T. B.} and Whitaker, {J. F.} and Mourou, {G. A.}",

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AU - Son, J.

AU - Sha, W.

AU - Kim, J.

AU - Norris, T. B.

AU - Whitaker, J. F.

AU - Mourou, G. A.

PY - 1993

Y1 - 1993

N2 - We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired, respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the degree of overshoot was maximized for an electric field on the GaAs between 40 and 50 kV/cm when 1.44-eV photons in an 80-fs laser pulse excited the sample. For carriers excited with higher initial energy (1.55 eV), the degree of overshoot decreased and the maximum degree of overshoot occurred at a higher electric field.

AB - We have experimentally studied the transient velocity overshoot dynamics of photoexcited carriers in GaAs for electric fields as great as 200 kV/cm. Time domain waveforms proportional to the velocity and the acceleration of carriers have been acquired, respectively, from guided and free-space radiating signals which contain terahertz frequency components. The measurements demonstrated that the degree of overshoot was maximized for an electric field on the GaAs between 40 and 50 kV/cm when 1.44-eV photons in an 80-fs laser pulse excited the sample. For carriers excited with higher initial energy (1.55 eV), the degree of overshoot decreased and the maximum degree of overshoot occurred at a higher electric field.

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Transient velocity overshoot dynamics in GaAs for electric fields ≤ 200 kV/cm

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