Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor

Yun Seop Yu; Seung Hun Son; Hee Tae Kim; Yong Gyu Kim; Jung Hyun Oh; Hanjung Kim; Sung Woo Hwang; Bum Ho Choi; Doyeol Ahn

doi:10.1143/JJAP.46.2592

Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor

Yun Seop Yu, Seung Hun Son, Hee Tae Kim, Yong Gyu Kim, Jung Hyun Oh, Hanjung Kim, Sung Woo Hwang, Bum Ho Choi, Doyeol Ahn

School of Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have fabricated an in-plane-gate (IPG) single-electron transistor (SET) on an AlGaAs/GaAs wafer and characterized it by measuring a transmitted signal from the transmission-type radio-frequency SET (RF-SET) electrometer system consisting of a resonant tank (LC) circuit and a SET. By measuring the frequency characteristics, we estimate the resonance frequency of the system to be 480 MHz at temperature T = 4.2 K. We find that, driving the SET at this frequency, the transmitted signal depends on the gate voltage, and successfully demonstrates the measuring operation. However, the difference between the transmitted signals at the on- and off-gate voltages of the SET was measured to be 0.15 dB, which is relatively small, and it is necessary to optimize the electrical environment of the system by improving the signal-to-noise ratio.

Original language	English
Pages (from-to)	2592-2595
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	46
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.46.2592
State	Published - 24 Apr 2007

Keywords

Electrometer
In-plane-gate SET
RF-SET
Single-electron transistor
Transmission-type

Access to Document

10.1143/JJAP.46.2592

Cite this

Yu, Y. S., Son, S. H., Kim, H. T., Kim, Y. G., Oh, J. H., Kim, H., Hwang, S. W., Choi, B. H., & Ahn, D. (2007). Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 46(4 B), 2592-2595. https://doi.org/10.1143/JJAP.46.2592

@article{4a0a14687af34f42ba9b78a6380672a3,

title = "Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor",

abstract = "We have fabricated an in-plane-gate (IPG) single-electron transistor (SET) on an AlGaAs/GaAs wafer and characterized it by measuring a transmitted signal from the transmission-type radio-frequency SET (RF-SET) electrometer system consisting of a resonant tank (LC) circuit and a SET. By measuring the frequency characteristics, we estimate the resonance frequency of the system to be 480 MHz at temperature T = 4.2 K. We find that, driving the SET at this frequency, the transmitted signal depends on the gate voltage, and successfully demonstrates the measuring operation. However, the difference between the transmitted signals at the on- and off-gate voltages of the SET was measured to be 0.15 dB, which is relatively small, and it is necessary to optimize the electrical environment of the system by improving the signal-to-noise ratio.",

keywords = "Electrometer, In-plane-gate SET, RF-SET, Single-electron transistor, Transmission-type",

author = "Yu, {Yun Seop} and Son, {Seung Hun} and Kim, {Hee Tae} and Kim, {Yong Gyu} and Oh, {Jung Hyun} and Hanjung Kim and Hwang, {Sung Woo} and Choi, {Bum Ho} and Doyeol Ahn",

year = "2007",

month = apr,

day = "24",

doi = "10.1143/JJAP.46.2592",

language = "English",

volume = "46",

pages = "2592--2595",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 B",

}

Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor. / Yu, Yun Seop; Son, Seung Hun; Kim, Hee Tae et al.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2592-2595.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor

AU - Yu, Yun Seop

AU - Son, Seung Hun

AU - Kim, Hee Tae

AU - Kim, Yong Gyu

AU - Oh, Jung Hyun

AU - Kim, Hanjung

AU - Hwang, Sung Woo

AU - Choi, Bum Ho

AU - Ahn, Doyeol

PY - 2007/4/24

Y1 - 2007/4/24

N2 - We have fabricated an in-plane-gate (IPG) single-electron transistor (SET) on an AlGaAs/GaAs wafer and characterized it by measuring a transmitted signal from the transmission-type radio-frequency SET (RF-SET) electrometer system consisting of a resonant tank (LC) circuit and a SET. By measuring the frequency characteristics, we estimate the resonance frequency of the system to be 480 MHz at temperature T = 4.2 K. We find that, driving the SET at this frequency, the transmitted signal depends on the gate voltage, and successfully demonstrates the measuring operation. However, the difference between the transmitted signals at the on- and off-gate voltages of the SET was measured to be 0.15 dB, which is relatively small, and it is necessary to optimize the electrical environment of the system by improving the signal-to-noise ratio.

AB - We have fabricated an in-plane-gate (IPG) single-electron transistor (SET) on an AlGaAs/GaAs wafer and characterized it by measuring a transmitted signal from the transmission-type radio-frequency SET (RF-SET) electrometer system consisting of a resonant tank (LC) circuit and a SET. By measuring the frequency characteristics, we estimate the resonance frequency of the system to be 480 MHz at temperature T = 4.2 K. We find that, driving the SET at this frequency, the transmitted signal depends on the gate voltage, and successfully demonstrates the measuring operation. However, the difference between the transmitted signals at the on- and off-gate voltages of the SET was measured to be 0.15 dB, which is relatively small, and it is necessary to optimize the electrical environment of the system by improving the signal-to-noise ratio.

KW - Electrometer

KW - In-plane-gate SET

KW - RF-SET

KW - Single-electron transistor

KW - Transmission-type

UR - http://www.scopus.com/inward/record.url?scp=34547868560&partnerID=8YFLogxK

U2 - 10.1143/JJAP.46.2592

DO - 10.1143/JJAP.46.2592

M3 - Article

AN - SCOPUS:34547868560

SN - 0021-4922

VL - 46

SP - 2592

EP - 2595

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

IS - 4 B

ER -

Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this