Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor

Yun Seop Yu, Seung Hun Son, Hee Tae Kim, Yong Gyu Kim, Jung Hyun Oh, Hanjung Kim, Sung Woo Hwang, Bum Ho Choi, Doyeol Ahn

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have fabricated an in-plane-gate (IPG) single-electron transistor (SET) on an AlGaAs/GaAs wafer and characterized it by measuring a transmitted signal from the transmission-type radio-frequency SET (RF-SET) electrometer system consisting of a resonant tank (LC) circuit and a SET. By measuring the frequency characteristics, we estimate the resonance frequency of the system to be 480 MHz at temperature T = 4.2 K. We find that, driving the SET at this frequency, the transmitted signal depends on the gate voltage, and successfully demonstrates the measuring operation. However, the difference between the transmitted signals at the on- and off-gate voltages of the SET was measured to be 0.15 dB, which is relatively small, and it is necessary to optimize the electrical environment of the system by improving the signal-to-noise ratio.

Original languageEnglish
Pages (from-to)2592-2595
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 B
StatePublished - 24 Apr 2007


  • Electrometer
  • In-plane-gate SET
  • RF-SET
  • Single-electron transistor
  • Transmission-type


Dive into the research topics of 'Transmission-type radio-frequency single-electron transistor with in-plane-gate single-electron transistor'. Together they form a unique fingerprint.

Cite this