Transport experiments on InAs self-assembled quantum dots in the microwave regime

M. S. Jun, D. Y. Jeong, S. H. Lee, K. Heo, J. E. Oh, S. W. Hwang, D. Ahn

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Abstract

We report an experimental study on microwave (MW) transport through InAs self-assembled quantum dots (SAQDs) embedded in a AuGaAs Schottky diode. In the dc measurement, we observed isolated conductance peaks resulting from the resonant tunneling through the quantum states of the SAQDs. A single peak split into two peaks when MW signals were added. The relative strengths of these split conductance peaks changed with frequency, and it was explained by a simple convolution model including nonadiabatic electron tunneling. The inverse tunneling rate was obtained from the degree of this nonadiabacity at high frequencies.

Original languageEnglish
Article number085319
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number8
DOIs
StatePublished - 15 Aug 2005

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